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Volumn 520, Issue 4, 2011, Pages 1278-1284
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Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy
a
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Author keywords
Cuprous oxide; Low temperature processing; p Type metal oxides; Sputtering; Thin film
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Indexed keywords
BAND GAPS;
COMPLEMENTARY LOGIC;
CUPRIC OXIDE;
CUPROUS OXIDE;
DEPOSITION ENERGY;
DEPOSITION PARAMETERS;
ELECTRICAL RESISTIVITY;
FILM PROPERTIES;
FILM STRESS;
HIGH DENSITY;
HIGH DEPOSITION RATES;
INDEPENDENT CONTROL;
ION ENERGIES;
KEY TECHNOLOGIES;
LOW ENERGIES;
LOW TEMPERATURE PROCESSING;
LOW TEMPERATURES;
MATERIAL PROPERTY;
METAL OXIDE THIN FILMS;
METALLIC COPPER;
MIXED PHASE;
OVEROXIDATIONS;
OXYGEN FLOW RATES;
P TYPE SEMICONDUCTOR;
P-N JUNCTION;
P-TYPE;
PLASMA POWER;
PLASTIC SUBSTRATES;
REACTION ENERGY;
SPUTTERING TECHNIQUES;
SUBSTRATE HEATING;
TARGET POWER;
TRANSPARENT ELECTRONICS;
TRANSPARENT SEMICONDUCTING OXIDE;
ZNO;
DEPOSITION;
ELECTRIC CONDUCTIVITY;
FLOW RATE;
HOLE MOBILITY;
MATERIALS;
METALLIC COMPOUNDS;
NANOSTRUCTURED MATERIALS;
OXIDE FILMS;
OXYGEN;
PLASMA DENSITY;
PLASMA DEPOSITION;
QUALITY CONTROL;
SEMICONDUCTOR JUNCTIONS;
SOLAR ENERGY;
SPUTTERING;
SUBSTRATES;
THIN FILM TRANSISTORS;
THIN FILMS;
TRANSISTORS;
VAPOR DEPOSITION;
ZINC OXIDE;
COPPER;
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EID: 82755198057
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2011.04.192 Document Type: Conference Paper |
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Times cited : (62)
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References (24)
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