Electrical transport, microstructure and optical properties of Cr-doped In2O3 thin film prepared by sol-gel method

Journal of Alloys and Compounds

Volumn 575, Issue , 2013, Pages 198-206

  Baqiah, H ^a   Ibrahim, N B ^a   Abdi, M H ^a   Halim, S A ^b  

^a UNIVERSITI KEBANGSAAN MALAYSIA   (Malaysia)

^b UNIVERSITY PUTRA MALAYSIA   (Malaysia)

Author keywords

Conducting mechanism; Hopping conductivity models; Indium oxide; Porosity; Sol gel; Transmittance

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; DOPING (ADDITIVES); ENERGY GAP; FIELD EMISSION MICROSCOPES; FILM PREPARATION; INDIUM; MICROSTRUCTURE; NANOCRYSTALS; OPTICAL EMISSION SPECTROSCOPY; OPTICAL PROPERTIES; POROSITY; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; ULTRAVIOLET VISIBLE SPECTROSCOPY;

CONDUCTING MECHANISM; ELECTRICAL AND OPTICAL PROPERTIES; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; HOPPING CONDUCTIVITY MODEL; INDIUM OXIDE; NANOCRYSTALLINE THIN FILMS; THERMAL ACTIVATION ENERGIES; TRANSMITTANCE;

OPTICAL FILMS;

EID: 84877629999     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.04.089     Document Type: Article

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