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Solid State Sciences

Volumn 14, Issue 6, 2012, Pages 705-710

Open air annealing effect on the electrical and optical properties of tin doped ZnO nanostructure

(3) Shelke, Vrushali a Bhole, M P a Patil, D S a

a NORTH MAHARASHTRA UNIVERSITY (India)

Author keywords

Electrical properties; Nanostructures; Optical materials; Optical properties; Sol gel growth

Indexed keywords

AIR-ANNEALING; DOPED ZNO; DOPING CONCENTRATION; ELECTRICAL AND OPTICAL PROPERTIES; EXTINCTION COEFFICIENTS; GRAIN SIZE; OPTICAL TRANSMISSION SPECTRUM; SILICON SUBSTRATES; SOL-GEL GROWTH; VISIBLE RANGE;

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; ENERGY GAP; MULTILAYER FILMS; NANOSTRUCTURES; OPTICAL MATERIALS; OPTICAL PROPERTIES; REFRACTIVE INDEX; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SOL-GEL PROCESS; SOL-GELS; TIN; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 84860192530 PISSN: 12932558 EISSN: None Source Type: Journal
DOI: 10.1016/j.solidstatesciences.2012.03.023 Document Type: Article

Times cited : (27)

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