Effects of annealing atmosphere on microstructure and ferroelectric properties of praseodymium-doped Bi4Ti3O12 thin films prepared by sol-gel method

Thin Solid Films

Volumn 517, Issue 17, 2009, Pages 4818-4821

  Chen, H Z ^a   Kao, M C ^a   Young, S L ^a   Yu, C C ^a   Lin, C H ^a   Lee, C M ^a   Ou, C R ^a  

^a HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Annealing atmophere; Bismuth titanate; Ferroelectric; Sol gel process

Indexed keywords

AMBIENT ATMOSPHERE; ANNEALING ATMOSPHERES; BISMUTH TITANATE; COERCIVE FIELD; DIFFRACTION PEAKS; FATIGUE-FREE CHARACTERISTICS; FERROELECTRIC; FERROELECTRIC PROPERTY; NON-VOLATILE FERROELECTRIC RANDOM ACCESS MEMORIES; OXYGEN ATMOSPHERE; PT(111); REMANENT POLARIZATION; SI (100) SUBSTRATE; SOL-GEL METHODS; SOL-GEL TECHNOLOGY; SWITCHING CYCLES; XRD SPECTRA;

BISMUTH; FERROELECTRICITY; GELATION; GELS; NANOSTRUCTURED MATERIALS; OXYGEN; PLATINUM; PRASEODYMIUM; RANDOM ACCESS STORAGE; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SEMICONDUCTING BISMUTH COMPOUNDS; SOL-GELS; SOLS; THIN FILM DEVICES; THIN FILMS; VACUUM;

SOL-GEL PROCESS;

EID: 65649128945     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.012     Document Type: Article

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