Structural, optical and electrical properties of post annealed Mg doped ZnO films for optoelectronics applications

Optical and Quantum Electronics

Volumn 41, Issue 1, 2009, Pages 17-26

  Sonawane, B K ^a   Bhole, M P ^a   Patil, D S ^a  

^a NORTH MAHARASHTRA UNIVERSITY   (India)

Author keywords

Annealing temperature; Mg x Zn 1 x O; Optical properties; Sol gel; Structural properties

Indexed keywords

ABSORPTION COEFFICIENTS; ANNEALING TEMPERATURE; ANNEALING TEMPERATURES; BIASED VOLTAGE; DEPOSITED FILMS; ENERGY DISPERSIVE ANALYSIS; GLASS SUBSTRATES; IV CHARACTERISTICS; IV CHARACTERIZATION; MAGNESIUM ACETATES; MG X ZN 1-X O; MG CONTENT; MG-DOPED; OPTICAL AND ELECTRICAL PROPERTIES; POLYCRYSTALLINE; SEM; SEMICONDUCTOR CHARACTERIZATION; SOL-GEL METHODS; STRUCTURAL AND OPTICAL PROPERTIES; UV-VIS SPECTROPHOTOMETERS; X RAY DIFFRACTOMETERS; XRD SPECTRA; ZINC ACETATE DIHYDRATE; ZNO FILMS;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC PROPERTIES; ETHANOL; GELATION; GELS; MAGNESIUM; METALLIC FILMS; OPTICAL MICROSCOPY; ORGANIC SOLVENTS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SOL-GEL PROCESS; SOL-GELS; SOLS; STRUCTURAL PROPERTIES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 70349459733     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-009-9317-y     Document Type: Article

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