Effects of ITO precursor thickness on transparent conductive Al doped ZnO film for solar cell applications

Solar Energy Materials and Solar Cells

Volumn 95, Issue 1, 2011, Pages 138-141

  Kang, Dong Won ^a   Kuk, Seung Hee ^a   Ji, Kwang Sun ^b   Lee, Heon Min ^b   Han, Min Koo ^a  

^a Seoul National University   (South Korea)

^b LG Electronics Inc   (South Korea)

Author keywords

ITO precursor; Solar cell; ZnO:Al

Indexed keywords

AL-DOPED ZNO; AZO FILMS; CRYSTALLINE STRUCTURE; CRYSTALLINITIES; D.C. MAGNETRON SPUTTERING; GLASS SUBSTRATES; HALL MEASUREMENTS; ITO PRECURSOR; OPTOELECTRONIC APPLICATIONS; PREFERRED ORIENTATIONS; SOLAR-CELL APPLICATIONS; SURFACE-TEXTURED; THIN FILM SOLAR CELLS; TRANSPARENT CONDUCTIVE; X-RAY DIFFRACTION MEASUREMENTS; ZNO;

ALUMINUM; EPITAXIAL GROWTH; FILM GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; OPTICAL FILMS; SEMICONDUCTOR DOPING; SOLAR CELLS; SUBSTRATES; X RAY DIFFRACTION; X RAY POWDER DIFFRACTION; ZINC OXIDE;

ITO GLASS;

EID: 78149357407     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.04.068     Document Type: Conference Paper

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