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Volumn 255, Issue 23, 2009, Pages 9420-9424
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Influence of oxygen growth pressure on laser ablated Cr-doped In 2 O 3 thin films
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Author keywords
Chromium; Indium oxide; Mobility; Transparent conductor
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Indexed keywords
CARRIER MOBILITY;
CHROMIUM;
CHROMIUM COMPOUNDS;
CONDUCTIVE FILMS;
DEFECT DENSITY;
INDIUM COMPOUNDS;
PARTICLE SIZE;
PARTICLE SIZE ANALYSIS;
PULSED LASER DEPOSITION;
PULSED LASERS;
TEMPERATURE;
THIN FILMS;
X RAY DIFFRACTION ANALYSIS;
INDIUM OXIDE;
NEGATIVE TEMPERATURES;
OPTICAL TRANSPARENCY;
PARTIAL OXYGEN PRESSURES;
SEMICONDUCTING BEHAVIOR;
TEMPERATURE INTERVALS;
TEMPERATURE-DEPENDENT RESISTIVITY;
TRANSPARENT CONDUCTORS;
OXYGEN VACANCIES;
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EID: 69249230766
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.07.045 Document Type: Article |
Times cited : (15)
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References (24)
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