Composition, structure and electrical properties of DC reactive magnetron sputtered Al2O3 thin films

Materials Science in Semiconductor Processing

Volumn 16, Issue 3, 2013, Pages 705-711

  Prasanna, S ^a   Krishnendu, G ^a   Shalini, S ^a   Biji, P ^b   Mohan Rao, G ^c   Jayakumar, S ^a   Balasundaraprabhu, R ^a  

^a PSG COLLEGE OF TECHNOLOGY   (India)

^b PSG INSTITUTE OF ADVANCED STUDIES   (India)

^c INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

A. Thin films; B. Reactive magnetron sputtering; C. Electrical properties

Indexed keywords

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; DC REACTIVE MAGNETRON SPUTTERING; EFFECT OF TEMPERATURE; OXYGEN GAS PRESSURE; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS;

ALUMINA; AMORPHOUS FILMS; ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITS; DIELECTRIC PROPERTIES; MAGNETRON SPUTTERING; PHOTOELECTRONS; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; TOPOGRAPHY; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ALUMINUM;

EID: 84877583235     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.12.012     Document Type: Article

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