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Thin Solid Films

Volumn 520, Issue 7, 2012, Pages 2689-2694

Dielectric properties of DC reactive magnetron sputtered Al 2O 3 thin films

(5) Prasanna, S a Mohan, Rao G b Jayakumar, S a Kannan, M D a Ganesan, V c

a PSG COLLEGE OF TECHNOLOGY (India)

b INDIAN INSTITUTE OF SCIENCE (India)

c UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH (India)

Author keywords

Aluminum oxide; Electrical properties; Reactive magnetron sputtering; Thin films

Indexed keywords

AC CONDUCTIVITY; AL THIN FILMS; ALUMINUM OXIDES; ANNEALED FILMS; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; ATOMIC RATIO; DC REACTIVE MAGNETRON SPUTTERING; EFFECT OF TEMPERATURE; ELECTRICAL PROPERTY; GLASS SUBSTRATES; OXYGEN GAS PRESSURE; REACTIVE GAS; REACTIVE MAGNETRON SPUTTERING; RMS ROUGHNESS; SPUTTERING POWER; TEMPERATURE COEFFICIENT OF CAPACITANCE;

ACTIVATION ENERGY; ALUMINA; ALUMINUM; ALUMINUM COATINGS; AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; DC POWER TRANSMISSION; DIELECTRIC PROPERTIES; GLASS; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILM CIRCUITS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

TOPOGRAPHY;

EID: 84856392128 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2011.11.040 Document Type: Article

Times cited : (63)

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