Thermally efficient and highly scalable In2Se3 nanowire phase change memory

Journal of Applied Physics

Volumn 113, Issue 16, 2013, Pages

  Jin, Bo ^a   Kang, Daegun ^a   Kim, Jungsik ^a   Meyyappan, M ^a,b   Lee, Jeong Soo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS AND CRYSTALLINE PHASIS; ELECTRICAL CHARACTERISTIC; MEMORY CELL; MEMORY SWITCHING; NANOWIRE MEMORY; NON-VOLATILE; SIZE DEPENDENT; THERMAL EFFICIENCY;

HEAT RESISTANCE; SEMICONDUCTOR STORAGE;

NANOWIRES;

EID: 84877304186     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4802672     Document Type: Article

References (40)

1. S. Raoux, R. M. Shelby, J. Jordan-Sweet, B. Munoz, M. Salinga, Y.-C. Chen, Y.-H. Shih, E.-K. Lai, and M.-H. Lee, Microelectron. Eng. 85, 2330 (2008). 10.1016/j.mee.2008.08.004
2. A. Popov, Phys. Status Solidi B 246, 1837 (2009). 10.1002/pssb.200982013
3. D. Ielmini, D. Mantegazza, A. Lacaita, A. Pirovano, and F. Pellizzer, Solid-State Electron. 49, 1826 (2005). 10.1016/j.sse.2005.10.013
4. D.-H. Kang, D.-H. Ahn, K.-B. Kim, J. F. Webb, and K.-W. Yi, J. Appl. Phys. 94, 3536 (2003). 10.1063/1.1598272
5. S.-H. Lee, Y. Jung, and R. Agarwal, Nat. Nanotechnol. 2, 626 (2007). 10.1038/nnano.2007.291
6. H. Lee, Y. K. Kim, D. Kim, and D.-H. Kang, IEEE Trans. Magn. 41, 1034 (2005) 10.1109/TMAG.2004.842032.
7. S.-H. Lee, D.-K. Ko, Y. Jung, and R. Agarwal, Appl. Phys. Lett. 89, 223116 (2006). 10.1063/1.2397558
8. B. Yu, X. Sun, S. Ju, D. Janes, and M. Meyyappan, IEEE Trans. Nanotechnol. 7, 496 (2008) 10.1109/TNANO.2008.926374.
9. B. Yu, S. Ju, X. Sun, G. Ng, T. D. Nguyen, M. Meyyappan, and D. B. Janes, Appl. Phys. Lett. 91, 133119 (2007). 10.1063/1.2793505
10. P. Buffat and J.-P. Borel, Phys. Rev. A 13, 2287 (1976). 10.1103/PhysRevA.13.2287
11. A. N. Goldstein, C. M. Echer, and A. P. Alivisatos, Science 256, 1425 (1992). 10.1126/science.256.5062.1425
12. N. Okui, J. Mater. Sci. 25, 1623 (1990). 10.1007/BF01045361
13. X. Sun, B. Yu, G. Ng, and M. Meyyappan, J. Phys. Chem. C 111, 2421 (2007). 10.1021/jp0658804
14. S. Meister, H. Peng, K. McIlwrath, K. Jarausch, X. F. Zhang, and Y. Cui, Nano Lett. 6, 1514 (2006). 10.1021/nl061102b
15. M. W. Simone Raoux, Phase Change Materials: Science and Applications, 1st ed. (Springer, 2008).
16. M. Zhu, L. Wu, Z. Song, F. Rao, D. Cai, C. Peng, X. Zhou, K. Ren, S. Song, B. Liu, and S. Feng, Appl. Phys. Lett. 100, 122101 (2012). 10.1063/1.3695036
17. E. Mafi, A. Soudi, and Y. Gu, J. Phys. Chem. C 116, 22539 (2012). 10.1021/jp305696w
18. X. Sun, B. Yu, G. Ng, M. Meyyappan, S. Ju, and D. Janes, IEEE Trans. Electron Devices 55, 3131 (2008). 10.1109/TED.2008.2005160
19. G.-F. Zhou, Mater. Sci. Eng., A 304, 73 (2001).
20. K.-F. Kao, Y.-C. Chu, M.-J. Tsai, and T.-S. Chin, J. Appl. Phys. 111, 102808 (2012). 10.1063/1.4714711
21. C.-K. Baek, D. Kang, J. Kim, B. Jin, T. Rim, S. Park, M. Meyyappan, Y.-H. Jeong, and J.-S. Lee, Solid-State Electron. 80, 10 (2013). 10.1016/j.sse.2012. 10.007
22. M. Meyyappan, Prog. Cryst. Growth Charact. Mater. 55, 1 (2009). 10.1016/j.pcrysgrow.2009.01.001
23. T.-Y. Lee, S.-S. Yim, D. Lee, M.-H. Lee, D.-H. Ahn, and K.-B. Kim, Appl. Phys. Lett. 89, 163503 (2006). 10.1063/1.2362981
24. H. Horii, J. H. Park, J. H. Yi, B. J. Kuh, and Y. H. Ha, IEICE Trans. Electron E87-C, 1673 (2004).
25. M. Li, Mater. Lett. 76, 138 (2012). 10.1016/j.matlet.2012.02.085
26. A. Pirovano, A. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, Tech. Dig. - Int. Electron Devices Meet. 2003, 29.6.1 10.1109/IEDM.2003. 1269376.
27. M. Boniardi, A. Redaelli, I. Tortorelli, F. Pellizzer, and A. Pirovano, IEEE Electron Device Lett. 33, 594 (2012). 10.1109/LED.2012.2185674
28. T. M. Tritt, Thermal Conductivity: Theory, Properties, and Applications, 1st ed. (Springer, 2005).
29. P. Nath and K. L. Chopra, Phys. Rev. B 10, 3412 (1974). 10.1103/PhysRevB.10.3412
30. M. Meyyappan and M. K. Sunkara, Inorganic Nanowires: Applications, Properties and Characterization (CRC Press, Boca Rataon, FL, 2010), Chap..
31. Y. Jung, S.-H. Lee, D.-K. Ko, and R. Agarwal, J. Am. Chem. Soc. 128, 14026 (2006). 10.1021/ja065938s
32. Y. Jung, C.-Y. Yang, S.-H. Lee, and R. Agarwal, Nano Lett. 9, 2103 (2009). 10.1021/nl900620n
33. N. Han, S. I. Kim, J.-D. Yang, K. Lee, H. Sohn, H.-M. So, C. W. Ahn, and K.-H. Yoo, Adv. Mater. 23, 1871 (2011). 10.1002/adma.201004746
34. Y. Wu and P. Yang, Adv. Mater. 13, 520 (2001). 10.1002/1521-4095(200104) 13:7<520::AID-ADMA520>3.0.CO;2-W
35. P. R. Couchman and W. A. Jesser, Nature 269, 481 (1977). 10.1038/269481a0
36. H.-K. Lyeo, D. G. Cahill, B.-S. Lee, J. R. Abelson, M.-H. Kwon, K.-B. Kim, S. G. Bishop, and B.-K. Cheong, Appl. Phys. Lett. 89, 151904 (2006). 10.1063/1.2359354
37. K. E. Goodson, Science 315, 342 (2007). 10.1126/science.1138067
38. H. S. P. Wong, S. Raoux, S. Kim, J. Liang, J. P. Reifenberg, B. Rajendran, M. Asheghi, and K. E. Goodson, Proc. IEEE 98, 2201 (2010). 10.1109/JPROC.2010.2070050
39. J. Reifenberg, D. Kencke, and K. Goodson, IEEE Electron Device Lett. 29, 1112 (2008). 10.1109/LED.2008.2003012
40. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Dev. 51, 452 (2004). 10.1109/TED.2003.823243