Chalcogenide-nanowire-based phase change memory

IEEE Transactions on Nanotechnology

Volumn 7, Issue 4, 2008, Pages 496-502

  Yu, Bin ^a   Sun, Xuhui ^b   Ju, Sanghyun ^c   Janes, David B ^d   Meyyappan, M ^a  

^a NASA AMES RESEARCH CENTER   (United States)

^b Santa Clara University   (United States)

^c Kyonggi University   (South Korea)

^d PURDUE UNIVERSITY   (United States)

Author keywords

Chalcogenide; Nanoelectronics; Nanowires (NWs); Phase change random access memory (PRAM)

Indexed keywords

ELECTRIC WIRE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OPTICAL DESIGN; RANDOM ACCESS STORAGE;

CHALCOGENIDE; NANOELECTRONICS; NANOWIRES (NWS); PHASE CHANGE RANDOM ACCESS MEMORY (PRAM); PHASE-CHANGE MEMORIES; PHASE-CHANGE RANDOM ACCESS MEMORY;

PHASE CHANGE MEMORY;

EID: 48849101173     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2008.926374     Document Type: Article

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