Germanium antimonide phase-change nanowires for memory applications

IEEE Transactions on Electron Devices

Volumn 55, Issue 11, 2008, Pages 3131-3135

  Sun, Xuhui ^a   Yu, Bin ^a   Ng, Garrick ^a   Meyyappan, M ^a   Ju, Sanghyun ^b   Janes, David B ^c  

^a NASA AMES RESEARCH CENTER   (United States)

^b PURDUE UNIVERSITY   (United States)

^c Kyonggi University   (South Korea)

Author keywords

Chalcogenide; Flash memory; Nanowire; Phase change material (PCM); Phase change memory; Random access memory (RAM)

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC WIRE; FLASH MEMORY; GERMANIUM; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; RANDOM ACCESS STORAGE;

ANTIMONIDE; MEMORY APPLICATIONS; PROGRAMMING CURRENTS; RANDOM ACCESS MEMORY (RAM); RANDOM ACCESSES; RESISTANCE RATIOS; SET PROGRAMMINGS;

PHASE CHANGE MEMORY;

EID: 56549118778     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2008.2005160     Document Type: Article

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