Two generations of phase-change memory devices: Differences and common problems

Physica Status Solidi (B) Basic Research

Volumn 246, Issue 8, 2009, Pages 1837-1840

  Popov, Anatoly ^a  

^a MOSCOW POWER ENGINEERING INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 76949097492     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200982013     Document Type: Article

References (6)

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3. A. Popov, Semicond. Semimet. 78, 51 (2004).
4. A.I. Popov, N.I. Michalev, and V.K. Shemetova, Philos. Mag. B 47, 73 (1983).
5. A.L. Lacaita and D. J.Wouters, Phys. Status Solidi A 205, 2281 (2008).
6. W.Y. Cho, B.-H. Cho, B.-G. Choi, H.-R. Oh, S. Kang, K.-S. Kim, K.-H. Kim, D.-E. Kim, C.-K. Kwak, H.-G. Byun, Y. Hwang, S. Ahn, G.-H. Koh, G. Jeong, H. Jeong, and K. Kim, IEEE J. Solid State Circuits 40, 293 (2005).