A 0.24 μm PRAM cell technology using N-doped GeSbTe films

IEICE Transactions on Electronics

Volumn E87-C, Issue 10, 2004, Pages 1673-1678

  Horii, Hideki ^a   Park, Jeong Hee ^a   Yi, Ji Hye ^a   Kuh, Bong Jin ^a   Ha, Yong Ho ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

Chalcogenide; CMOS; GeSbTe; Memory; N doped; Phase change; PRAM

Indexed keywords

CD-ROM; CMOS INTEGRATED CIRCUITS; GRAIN GROWTH; NITROGEN; PERTURBATION TECHNIQUES; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTOR DOPING; VIDEODISKS;

GESBTE; N-DOPED CHALCOGENIDE; PHASE CHANGE RANDOM ACCESS MEMORY (PRAM); PRAM;

RANDOM ACCESS STORAGE;

EID: 7544222965     PISSN: 09168524     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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