Phase-change memory in Bi2Te3 nanowires

Advanced Materials

Volumn 23, Issue 16, 2011, Pages 1871-1875

  Han, Nalae ^a   Kim, Sung In ^a   Yang, Jeong Do ^a   Lee, Kyumin ^a   Sohn, Hyunchul ^a   So, Hye Mi ^b   Ahn, Chi Won ^b   Yoo, Kyung Hwa ^a  

^a Yonsei University   (South Korea)

^b National Nano Fab Center (NNFC)   (South Korea)

Author keywords

Bi2Te3 nanowires; data storage; PRAM nanodevices; self assembly; structure property relationships

Indexed keywords

AMORPHOUS PHASIS; AS-GROWN; BI2TE3 NANOWIRES; CRYSTALLINE PHASIS; CRYSTALLINE STRUCTURE; CRYSTALLINE-AMORPHOUS PHASE; DATA STORAGE; HIGH-RESISTANCE STATE; LINEAR CURRENTS; MEMORY SWITCHING; PHASE CHANGES; PRAM NANODEVICES; STRUCTURE-PROPERTY RELATIONSHIPS; VOLTAGE PULSE;

BEHAVIORAL RESEARCH; CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; NANOSTRUCTURED MATERIALS; NANOWIRES; SELF ASSEMBLY;

PHASE CHANGE MEMORY;

ALUMINUM OXIDE; BISMUTH; BISMUTH TELLURIDE; NANOWIRE; SILICON DERIVATIVE; SILICON NITRIDE; TELLURIUM;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRODE; ELECTROPLATING INDUSTRY;

ALUMINUM OXIDE; BISMUTH; CRYSTALLIZATION; ELECTRODES; ELECTROPLATING; NANOWIRES; SILICON COMPOUNDS; TELLURIUM;

EID: 79954994413     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201004746     Document Type: Article

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