Two-step growth of high quality Bi2Te3 thin films on Al2O3 (0001) by molecular beam epitaxy

Applied Physics Letters

Volumn 102, Issue 17, 2013, Pages

  Harrison, S E ^a   Li, S ^b   Huo, Y ^a   Zhou, B ^b,c,d   Chen, Y L ^b,c,d   Harris, J S ^a  

^a Stanford University   (United States)

^b STANFORD UNIVERSITY   (United States)

^c UNIVERSITY OF OXFORD   (United Kingdom)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; HIGH TEMPERATURE; HIGH-CRYSTALLINE QUALITY; LOW TEMPERATURE NUCLEATION; METALLIC SURFACE; TOPOLOGICAL INSULATORS; VAN DER WAALS EPITAXY; X-RAY DIFFRACTION MEASUREMENTS;

EPITAXIAL FILMS; FILM GROWTH; MOLECULAR BEAM EPITAXY; VAN DER WAALS FORCES; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84877292861     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4803717     Document Type: Article

References (34)

1. M. Z. Hasan and C. L. Kane, Rev. Mod. Phys. 82, 3045 (2010). 10.1103/RevModPhys.82.3045
2. J. E. Moore, Nature 464, 194 (2010). 10.1038/nature08916
3. P. Ghaemi, R. S. K. Mong, and J. E. Moore, Phys. Rev. Lett. 105, 166603 (2010). 10.1103/PhysRevLett.105.166603
4. O. A. Tretiakov, A. Abanov, and J. Sinova, Appl. Phys. Lett. 99, 113110 (2011). 10.1063/1.3637055
5. Y. P. Chen, Proc. SPIE 8373, 83730B (2012). 10.1117/12.920513
6. Z. Fan, J. Zheng, H.-Q. Wang, and J.-C. Zheng, Nanoscale Res. Lett. 7, 570 (2012). 10.1186/1556-276X-7-570
7. S. K. Mishra, S. Satpathy, and O. Jepsen, J. Phys.: Condens. Matter 9, 461 (1997). 10.1088/0953-8984/9/2/014
8. L. He, X. Kou, and K. L. Wang, Phys. Status Solidi (RRL) 7, 50 (2013). 10.1002/pssr.201307003
9. H. Cao, R. Venkatasubramanian, C. Liu, J. Pierce, H. Yang, M. Z. Hasan, Y. Wu, and Y. P. Chen, Appl. Phys. Lett. 101, 162104 (2012). 10.1063/1.4760226
10. E. Charles, E. Groubert, and A. Boyer, J. Mater. Sci. Lett. 7, 575 (1988) 10.1007/BF01730298.
11. S. Kikuchi, Y. Iwata, E. Hatta, J. Nagao, and K. Mukasa, in Proceedings of the XVI International Conference on Thermoelectrics, ICT97 (1997), pp. 97-100.
12. S. Cho, Y. Kim, A. DiVenere, G. K. Wong, J. B. Ketterson, and J. R. Meyer, Appl. Phys. Lett. 75, 1401 (1999). 10.1063/1.124707
13. N. Peranio, O. Eibl, and J. Nurnus, J. Appl. Phys. 100, 114306 (2006). 10.1063/1.2375016
14. H. W. Liu, H. T. Yuan, N. Fukui, L. Zhang, J. F. Jia, Y. Iwasa, M. W. Chen, T. Hashizume, T. Sakurai, and Q. K. Xue, Cryst. Growth Des. 10, 4491 (2010). 10.1021/cg1007457
15. X. Chen, X.-C. Ma, K. He, J.-F. Jia, and Q.-K. Xue, Adv. Mater. 23, 1162 (2011). 10.1002/adma.201003855
16. J. Krumrain, G. Mussler, S. Borisova, T. Stoica, L. Plucinski, C. M. Schneider, and D. Gruetzmacher, J. Cryst. Growth 324, 115 (2011). 10.1016/j.jcrysgro.2011.03.008
17. X. Liu, D. J. Smith, J. Fan, Y.-H. Zhang, H. Cao, Y. P. Chen, B. J. Kirby, N. Sun, S. T. Ruggiero, J. Leiner, in 15th International Conference on Narrow Gap Systems, edited by, G. A. Khodaparast, M. B. Santos, and, C. J. Stanton, (2011), Vol. 1416, p. 105.
18. G. Wang, X.-G. Zhu, Y.-Y. Sun, Y.-Y. Li, T. Zhang, J. Wen, X. Chen, K. He, L.-L. Wang, X.-C. Ma, Adv. Mater. 23, 2929 (2011). 10.1002/adma.201100678
19. Z. Aabdin, N. Peranio, M. Winkler, D. Bessas, J. König, R. P. Hermann, H. Böttner, and O. Eibl, J. Electron. Mater. 41, 1493 (2012). 10.1007/s11664-011-1870-z
20. S. Borisova, J. Krumrain, M. Luysberg, G. Mussler, and D. Gruetzmacher, Cryst. Growth Des. 12, 6098 (2012). 10.1021/cg301236s
21. A. Mzerd, D. Sayah, J. C. Tedenac, and A. Boyer, J. Cryst. Growth 140, 365 (1994). 10.1016/0022-0248(94)90312-3
22. N. Bansal, Y. S. Kim, E. Edrey, M. Brahlek, Y. Horibe, K. Iida, M. Tanimura, G.-H. Li, T. Feng, H.-D. Lee, Thin Solid Films 520, 224 (2011). 10.1016/j.tsf.2011.07.033
23. H. D. Li, Z. Y. Wang, X. Kan, X. Guo, H. T. He, Z. Wang, J. N. Wang, T. L. Wong, N. Wang, and M. H. Xie, New J. Phys. 12, 103038 (2010). 10.1088/1367-2630/12/10/103038
24. I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. 78, 013705 (2007). 10.1063/1.2432410
25. S. Schreyeck, N. V. Tarakina, G. Karczewski, C. Schumacher, T. Borzenko, C. Brune, H. Buhmann, C. Gould, K. Brunner, and L. W. Molenkamp, Appl. Phys. Lett. 102, 041914 (2013). 10.1063/1.4789775
26. H. J. Zhang, C. X. Liu, X. L. Qi, X. Dai, Z. Fang, and S. C. Zhang, Nat. Phys. 5, 438 (2009). 10.1038/nphys1270
27. N. V. Tarakina, S. Schreyeck, T. Borzenko, C. Schumacher, G. Karczewski, K. Brunner, C. Gould, H. Buhmann, and L. W. Molenkamp, Cryst. Growth Des. 12, 1913 (2012). 10.1021/cg201636g
28. X. Liu, D. J. Smith, H. Cao, Y. P. Chen, J. Fan, Y.-H. Zhang, R. E. Pimpinella, M. Dobrowolska, and J. K. Furdyna, J. Vac. Sci. Technol. B 30, 02B103 (2012). 10.1116/1.3668082
29. A. Karma and M. Plapp, Phys. Rev. Lett. 81, 4444 (1998). 10.1103/PhysRevLett.81.4444
30. M. Ferhat, J. C. Tedenac, and J. Nagao, J. Cryst. Growth 218, 250 (2000). 10.1016/S0022-0248(00)00582-0
31. Y. Liu, M. Weinert, and L. Li, Phys. Rev. Lett. 108, 115501 (2012). 10.1103/PhysRevLett.108.115501
32. W. Kullmann, J. Geurts, W. Richter, N. Lehner, H. Rauh, U. Steigenberger, G. Eichhorn, and R. Geick, Phys. Status Solidi B 125, 131 (1984). 10.1002/pssb.2221250114
33. A. Koma, Thin Solid Films 216, 72 (1992). 10.1016/0040-6090(92)90872-9
34. Y. L. Chen, J. G. Analytis, J.-H. Chu, Z. K. Liu, S.-K. Mo, X. L. Qi, H. J. Zhang, D. H. Lu, X. Dai, Z. Fang, Science 325, 178 (2009). 10.1126/science.1173034