The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Li, H D ^a,b   Wang, Z Y ^a   Kan, X ^a   Guo, X ^a   He, H T ^c   Wang, Z ^c   Wang, J N ^c   Wong, T L ^c   Wang, N ^c   Xie, M H ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b BEIJING JIAOTONG UNIVERSITY   (China)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; EPIFILMS; GROWTH FRONT; GROWTH OF THIN FILMS; GROWTH PARAMETERS; HIGH QUALITY; IN-PLANE; LINEAR DEPENDENCE; SI (1 1 1); SI(111) SUBSTRATE; SINGLE-CRYSTALLINE; THREADING DEFECTS; TWO-STEP GROWTH; VAN DER WAALS EPITAXY;

CARRIER MOBILITY; ELECTRIC INSULATORS; ELECTRIC RESISTANCE; EPITAXIAL FILMS; EPITAXIAL GROWTH; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; SILICON; SUBSTRATES; TOPOLOGY; VAN DER WAALS FORCES;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 78149435081     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/10/103038     Document Type: Article

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