Topological insulator Bi 2Te 3 films synthesized by metal organic chemical vapor deposition

Applied Physics Letters

Volumn 101, Issue 16, 2012, Pages

  Cao, Helin ^a   Venkatasubramanian, Rama ^b   Liu, Chang ^c,d   Pierce, Jonathan ^b   Yang, Haoran ^a   Zahid Hasan, M ^c,d   Wu, Yue ^a   Chen, Yong P ^a  

^a PURDUE UNIVERSITY   (United States)

^b RTI INTERNATIONAL   (United States)

^c PRINCETON UNIVERSITY   (United States)

^d Princeton University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANGLE RESOLVED PHOTOEMISSION SPECTROSCOPY; DEVICE APPLICATION; ELECTRONIC BAND STRUCTURE; ELECTRONIC TRANSPORT MEASUREMENTS; FUNDAMENTAL RESEARCH; GAAS(001); HALL EFFECT MEASUREMENT; HIGH QUALITY; SCALABLE METHODS; TI THIN FILMS; TOPOLOGICAL INSULATORS;

ELECTRONIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOELECTRON SPECTROSCOPY; RAMAN SPECTROSCOPY; SCALABILITY; SEMICONDUCTING SELENIUM COMPOUNDS; THIN FILMS; VAPORS; X RAY DIFFRACTION;

ELECTRIC INSULATORS;

EID: 84867760429     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4760226     Document Type: Article

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