Antisite defects of Bi2Te3 thin films

Applied Physics Letters

Volumn 75, Issue 10, 1999, Pages 1401-1403

  Cho, Sunglae ^a   Kim, Yunki ^a   DiVenere, Antonio ^a   Wong, George K ^a,c   Ketterson, John B ^a   Meyer, Jerry R ^b  

^a NORTHWESTERN UNIVERSITY   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; CRYSTAL DEFECTS; DEGRADATION; FILM GROWTH; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTING CADMIUM TELLURIDE; STOICHIOMETRY; SUBSTRATES; THIN FILMS; TRANSPORT PROPERTIES;

ANTISITE DEFECTS; LAYER-BY-LAYER GROWTH;

SEMICONDUCTING FILMS;

EID: 0032620898     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124707     Document Type: Article

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