Sb 2Te 3 and Bi 2Te 3 thin films grown by room-temperature MBE

Journal of Electronic Materials

Volumn 41, Issue 6, 2012, Pages 1493-1497

  Aabdin, Z ^a   Peranio, N ^a   Winkler, M ^b   Bessas, D ^c,d   Konig J ^b   Hermann, R P ^c,d   Bottner H ^b   Eibl, O ^a  

^a UNIVERSITY OF TÜBINGEN   (Germany)

^b FRAUNHOFER INSTITUTE FOR PHYSICAL MEASUREMENT TECHNIQUES IPM   (Germany)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d UNIVERSITY OF LIÈGE   (Belgium)

Author keywords

analytical transmission electron microscopy (TEM); molecular beam epitaxy (MBE); Thermoelectric effects; thin films; x ray diffraction (XRD)

Indexed keywords

ANALYTICAL TRANSMISSION ELECTRON MICROSCOPY; ENERGY DISPERSIVE X-RAY; ENERGY FILTERED TRANSMISSION ELECTRON MICROSCOPY; GRAIN BOUNDARY PHASIS; GRAIN SIZE; HIGH QUALITY; HIGH-ACCURACY; LARGE POWER; LOW MOBILITY; LOW POWER FACTOR; METALLIC LAYERS; ROOM TEMPERATURE; STOICHIOMETRIC FILMS; THERMOELECTRIC PROPERTIES;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC POWER FACTOR; EPITAXIAL GROWTH; GRAIN BOUNDARIES; MOLECULAR BEAM EPITAXY; THERMOELECTRIC POWER; THERMOELECTRICITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

THIN FILMS;

EID: 84862160839     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-011-1870-z     Document Type: Article

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