Mechanisms of spiral growth in Bi2Te3 thin films grown by the hot-wall-epitaxy technique

Journal of Crystal Growth

Volumn 218, Issue 2, 2000, Pages 250-258

  Ferhat, Marhoun ^a   Tedenac, Jean Claude ^a   Nagao, Jiro ^b  

^a UNIVERSITÉ DE MONTPELLIER   (France)

^b Materials Division   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ATOMIC FORCE MICROSCOPY; CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; FREE ENERGY; MORPHOLOGY; NUCLEATION; SEMICONDUCTING BISMUTH COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SUPERSATURATION;

BURGER VECTORS; BURTON-CABRERA-FRANK (BCF) MODELS; HOT-WALL-EPITAXY (HWE) METHOD; PERIODIC-BOND-CHAINS (PBC) MODELS;

THIN FILMS;

EID: 0034276095     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00582-0     Document Type: Article

References (33)

1. Hicks L.D., Dresselhaus M.S. Phys. Rev. B. 47:1993;12727.
2. Lin-Chung P.J., Reinecke T.L. Phys. Rev. B. 51:1995;13244.
3. Broido D.A., Reinecke T.L. Phys. Rev. B. 51:1995;13797.
4. Hicks L.D., Harman T.C., Sun X., Dresselhaus M.S. Phys. Rev. B. 53:1996;R10493.
5. Mahan G.D. Ehrenreich H., Spaen F. Solid State Physics. Vol. 51:1997;81-157 Academic Press, San Diego. (Chapter 2).
6. Francombe M. Philos. Mag. 10:1964;989.
7. Iwata Y., Kobayashi H., Kikuchi S., Hatta E., Mukasa K. J. Crystal Growth. 203:1999;125.
8. Venkatasubramanian R., Colpitts T., Watko E., Lamvik M., El-Masry N.E. J. Crystal Growth. 170:1997;817.
9. Lopez-Otero A. Thin Solid Films. 49:1978;1.
10. Kinochita H., Sakashita T., Fujiyasu H. J. Appl. Phys. 52:1981;2869.
11. Jantsch W., Lischka K., Eisenbeiss A., Pielher P., Clemens H., Bauer G. Appl. Phys. Lett. 50:1987;1654.
12. Fujiyasu H., Sasaya T., Katayama M., Ishino K., Kuwabara H., Nakanishi Y., Shimaoka J. Appl. Surf. Sci. 33/34:1988;854.
13. Yang H., Takenaka Y., Ishida A., Fujiyasu H. J. Appl. Phys. 68:1990;1606.
14. Ferhat M., Brun G., Liautard B., Charar S., Fau C., Averous M. Rowe D.M. Proceedings of the Third European Workshop on Thermoelectrics. 1996;8 Babrow Press, Cardiff, UK.
15. Y.A. Boikov, V.A. Danilov, T. Claeson, D. Erts, in: A. Heinrich, J. Schumann (Eds.), Proceeding of the 16th International Conference on Thermoelectrics, Dresden, Germany, IEEE Catalog No. 97TH8291, IEEE, Pictaway, NJ, 1997, pp. 89-92.
16. Burton W.K., Cabrera N., Frank F.C. Philos. Trans. Roy. Soc. London. Ser. A. 243:1951;299.
17. Hartman P. Bull. Minéral. 101:1978;195.
18. Ferhat M., Nouaoura M., Brun G., Liautard B., Lassabatere L., Tedenac J.C. J. Crystal Growth. 167:1996;122.
19. Kashkooli I.Y., Munir Z.A. J. Electrochem. Soc. 117:1970;248.
20. Frank F.C. Disc. Farad. Soc. Cryst. Growth. 5:1949;48.
21. Weishart H., Bauser E., Konuma M., Queisser H. J. Crystal Growth. 137:1994;335.
22. Sunagawa I. Miner. Soc. Am. Spectrosc. 1:1963;258.
23. Sunagawa I. Am. Miner. 47:1963;1139.
24. Cabrera N., Levine M. Philos. Mag. 1:1956;450.
25. Budevski E., Saikov G., Bostanov V. J. Crystal Growth. 29:1975;316.
26. W.A. Tiller, The Science of Crystallisation: Microscopic Interfacial Phenomena, Cambridge University Press, Cambridge, 1991, p. 43.
27. Haneman D. Phys. Rev. 119:1975;567.
28. M. Ferhat, M. Nouaoura, G. Brun, B. Liautard, L. Lassabatere, J.C. Tedenac , in: B. Gill, R.L. Aulombard (Eds.), Semiconductor Heteroepitaxy, Growth, Characterization and Devices Applications, World Scientific, Singapore, 1995, p. 226.
29. Qhalid Fareed R.S., Tottori S., Nishino K., Sakai S. J. Crystal Growth. 200:1999;348.
30. Komatsu M., Wang F., Tanaka N., Zama H., Morishita T. J. Crystal Growth. 205:1999;277.
31. Lampert B., Reichelt K. J. Crystal Growth. 51:1981;203.
32. Bhatt V.P., Vyas A.R., Pandya G.R. J. Crystal Growth. 28:1975;392.
33. Nagao J., Ferhat M., Hatta E., Mukasa K. Phys. Stat. Sol. 219(2):2000;347.