Molecular beam epitaxy of high structural quality Bi2Se 3 on lattice matched InP(111) substrates

Applied Physics Letters

Volumn 102, Issue 4, 2013, Pages

  Schreyeck, S ^a   Tarakina, N V ^a   Karczewski, G ^a,b   Schumacher, C ^a   Borzenko, T ^a   Brune C ^a   Buhmann, H ^a   Gould, C ^a   Brunner, K ^a   Molenkamp, L W ^a  

^a UNIVERSITY OF WÜRZBURG   (Germany)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPE IMAGES; CRYSTAL QUALITIES; HIGH RESOLUTION X RAY DIFFRACTION; INP; LATTICE-MATCHED; LAYER THICKNESS; MICROSCOPIC LEVELS; ROCKING CURVES; STRUCTURAL QUALITIES; TOPOLOGICAL INSULATORS; TWIN DOMAINS;

MOLECULAR BEAM EPITAXY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

EPITAXIAL GROWTH;

EID: 84873590464     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4789775     Document Type: Article

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