Mode of growth of ultrathin topological insulator Bi2Te 3 films on Si (111) substrates

Crystal Growth and Design

Volumn 12, Issue 12, 2012, Pages 6098-6103

  Borisova, Svetlana ^a,b   Krumrain, Julian ^a,b   Luysberg, Martina ^a   Mussler, Gregor ^a,b   Grützmacher, Detlev ^a,b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b Fundamentals of Future Information Technologies   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LEVELS; COMPLEX MATERIALS; CONTINUOUS FILMS; CRYSTAL DOMAIN; DEFECT FORMATION; FLOATING ISLANDS; GROWTH DYNAMICS; HIGH RESOLUTION; LAYERED MATERIAL; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SI (1 1 1); SI(111) SUBSTRATE; THIN EPITAXIAL FILMS; THREADING DISLOCATION; TOPOLOGICAL INSULATORS; ULTRA-THIN;

BISMUTH; DISLOCATIONS (CRYSTALS); ELECTRIC INSULATORS; ELECTRONIC PROPERTIES; EPITAXIAL FILMS; EPITAXIAL GROWTH; FILM PREPARATION; GRAPHENE; MOLECULAR BEAM EPITAXY; NUCLEATION; SCANNING TUNNELING MICROSCOPY; SILICON; SURFACE STATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS; VAN DER WAALS FORCES;

SUBSTRATES;

EID: 84870840404     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg301236s     Document Type: Article

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