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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 2, 2012, Pages

Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates

(9) Liu, Xinyu a Smith, David J b Cao, Helin c Chen, Yong P c Fan, Jin b,d Zhang, Yong Hang d Pimpinella, Richard E a Dobrowolska, Malgorzata a Furdyna, Jacek K a

a UNIVERSITY OF NOTRE DAME (United States)

b ARIZONA STATE UNIVERSITY (United States)

c PURDUE UNIVERSITY (United States)

d Arizona State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL FILMS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GAAS SUBSTRATES; GAAS(001); GROWTH MECHANISMS; HIGH-CRYSTALLINE QUALITY; TOPOLOGICAL INSULATORS;

GALLIUM ARSENIDE;

EID: 84861596480 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3668082 Document Type: Article

Times cited : (39)

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