Bimodal weibull distribution of metal/high-κ gate stack tddbinsights by scanning tunneling microscopy

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 146-148

  Yew, K S ^a   Ang, D S ^a   Bersuker, G ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b SEMATECH   (United States)

Author keywords

Gate oxide integrity; percolation theory; scanning probe microscopy; time dependent dielectric breakdown (BD)

Indexed keywords

AREA SCALING; COMBINED EFFECT; CONSTANT VOLTAGE; DISTRIBUTION OF METAL; EARLY FAILURE; GATE OXIDE INTEGRITY; GATE STACKS; LARGE AREA DEVICES; NANO SCALE; PERCOLATION THEORY; POLYCRYSTALLINE; SCANNING PROBES; SCANNING TUNNELING MICROSCOPES; STRUCTURAL DEFECT; TIME-DEPENDENT DIELECTRIC BREAKDOWN; WEIBULL; WEIBULL FAILURE DISTRIBUTION; WEIBULL SLOPE;

DEFECT DENSITY; DEFECTS; GATES (TRANSISTOR); GRAIN BOUNDARIES; LEAKAGE CURRENTS; LOGIC GATES; SCANNING PROBE MICROSCOPY; SCANNING TUNNELING MICROSCOPY; SOLVENTS;

WEIBULL DISTRIBUTION;

EID: 84856305266     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2174606     Document Type: Article

References (13)

1. A. Kerber, E. Cartier, B. P. Linder, S. A. Krishnan, and T. Nigam, "TDDB failure distribution of metal gate/high-κ CMOS devices on SOI substrates," in Proc. Int. Reliab. Phys. Symp., 2009, pp. 505-509.
2. T. Nigam, A. Kerber, and P. Peumans, "Accurate model for timedependent dielectric breakdown of high-κ metal gate stacks," in Proc. Int. Reliab. Phys. Symp., 2009, pp. 523-530.
3. G. Ribes, P. Mora, F. Monsieur, M. Rafik, F. Guarin, G. Yang, D. Roy, W. L. Chang, and J. Stathis, "High-κ gate stack breakdown statistics modeled by correlated interfacial layer and high-κ breakdown path," in Proc. Int. Reliab. Phys. Symp., 2010, pp. 364-368.
4. K. L. Pey, N. Raghavan, X. Li, W. H. Liu, K. Shubhakar, X. Wu, and M. Bosman, "New insight into the TDDB and post breakdown reliability of novel high-κ gate dielectric stacks," in Proc. Int. Reliab. Phys. Symp., 2010, pp. 354-363.
5. N. Raghavan, K. L. Pey, K. Shubhakar, and M. Bosman, "Modified percolation model for polycrystalline high-κ gate stack with grain boundary defects," IEEE Electron Device Lett., vol. 32, no. 1, pp. 78-80, Jan. 2011.
6. Y. C. Ong, D. S. Ang, K. L. Pey, S. J. O'Shea, K. E. J. Goh, C. Troadec, C. H. Tung, T. Kawanago, K. Kakushima, and H. Iwai, "Bilayer gate dielectric study by scanning tunneling microscopy," Appl. Phys. Lett., vol. 91, 10, no. 102 905, Sep. 2007.
7. Y. C. Ong, D. S. Ang, K. L. Pey, Z. R. Wang, S. J. O'Shea, C. H. Tung, T. Kawanago, K. Kakushima, and H. Iwai, "Electronic trap characterization of the Sc2O3/La2O3 high-κ gate stack by scanning tunneling microscopy," Appl. Phys. Lett., vol. 92, no. 2, p. 022 904, Jan. 2008.
8. K. S. Yew, Y. C. Ong, D. S. Ang, K. L. Pey, G. Bersuker, P. S. Lysaght, and D. Heh, "Nanoscale characterization of HfO2/SiOx gate stack degradation by scanning tunneling microscopy," in Proc. Int. Conf. Solid State Devices Mater., 2009, pp. 314-315.
9. G. Bersuker, D. C. Gilmer, D. Veksler, J. Yum, H. Park, S. Lian, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, M. Nafría, W. Taylor, P. D. Kirsch, and R. Jammy, "Metal oxide RRAM switching mechanism based on conductive filament microscopic properties," in IEDM Tech. Dig., 2010, pp. 456-459.
10. K. McKenna and A. Shluger, "The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2," Appl. Phys. Lett., vol. 95, no. 22, p. 222 111, Dec. 2009.
11. G. Bersuker, D. Heh, C. Young, H. Park, P. Khanal, L. Larcher, A. Padovani, P. Lenahan, J. Ryan, B. H. Lee, H. Tseng, and R. Jammy, "Breakdown in the metal/high-κ gate stack: Identifying the "weak link" in the multilayer dielectric," in IEDM Tech. Dig., 2008, pp. 791-794.
12. T. Kauerauf, R. Degraeve, E. Cartier, C. Soens, and G. Groeseneken, "Low Weibull slope of breakdown distributions in high-κ layers," IEEE Electron Device Lett., vol. 23, no. 4, pp. 215-217, Apr. 2002. (Pubitemid 34514977)
13. Y. H. Kim, K. Onishi, C. S. Kang, H. J. Cho, R. Choi, S. Krishnan, M. S. Akbar, and J. C. Lee, "Thickness dependence of Weibull slopes of HfO2 gate dielectric," IEEE Electron Device Lett., vol. 24, no. 1, pp. 40-42, Jan. 2003.