Effect of oxygen content on dielectric properties of float zone grown titanium dioxide (TiO2) crystal

Ferroelectrics

Volumn 377, Issue , 2008, Pages 1-21

  Bamzai, K K ^a   Koohpayeh, S M ^b   Kaur, B ^a   Fort, D ^b   Abell, J S ^b  

^a UNIVERSITY OF JAMMU   (India)

^b UNIVERSITY OF BIRMINGHAM   (United Kingdom)

Author keywords

Crystal growth; Dielectric properties; Impedance spectroscopy; Metals; Oxides

Indexed keywords

APPLIED ELECTRIC FIELD; CORRELATED BARRIER HOPPING; DIELECTRIC CONSTANTS; DIELECTRIC STUDIES; EFFECT OF OXYGEN; FLOAT ZONES; HOPPING MECHANISM; IMPEDANCE SPECTROSCOPY; OXYGEN DEFICIENCY; OXYGEN DEFICIENT; RUTILE CRYSTAL; TIO;

COLOR; CRYSTAL GROWTH; CRYSTALLIZATION; DIELECTRIC LOSSES; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; GRAIN BOUNDARIES; OXIDE MINERALS; OXYGEN; PERMITTIVITY; TITANIUM; TITANIUM DIOXIDE;

SINGLE CRYSTALS;

EID: 67650771516     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150190802523495     Document Type: Conference Paper

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