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Journal of Materials Chemistry C

Volumn 1, Issue 8, 2013, Pages 1651-1658

Solution-processed high-k HfO2 gate dielectric processed under softening temperature of polymer substrates

(7) Yoo, Young Bum a Park, Jee Ho a Lee, Kuen Ho a Lee, Hyun Woo a Song, Kie Moon b Lee, Se Jong c Baik, Hong Koo a

a Yonsei University (South Korea)

b Kyungsung University (South Korea)

c Konkuk University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; COATINGS; GATE DIELECTRICS; HAFNIUM OXIDES; HYDRATION; II-VI SEMICONDUCTORS; PROCESSING; SUBSTRATES; TEMPERATURE; THIN FILM CIRCUITS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; ZINC OXIDE;

BREAKDOWN CHARACTERISTICS; ENVIRONMENTALLY SAFE; FIELD-EFFECT MOBILITIES; FLEXIBLE ELECTRONIC DEVICES; HFO2 GATE DIELECTRICS; HIGH DIELECTRIC CONSTANTS; PROCESSING TEMPERATURE; SOFTENING TEMPERATURE;

HIGH-K DIELECTRIC;

EID: 84876941165 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c2tc00481j Document Type: Article

Times cited : (96)

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