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Volumn 4, Issue 3, 2012, Pages 1456-1461

Enhanced performance of solution-processed amorphous LiYInZnO thin-film transistors

Author keywords

amorphous ionic oxide semiconductor; semiconductor thin film transistor; sol gel; solution processed; yttrium indium zinc oxide

Indexed keywords

DEFECT SITES; ENHANCED PERFORMANCE; FIELD-EFFECT MOBILITIES; FILM QUALITY; HYDROXYL GROUPS; IONIC OXIDES; LOW TEMPERATURES; NON-DOPED; OXYGEN BONDING; SOLUTION-PROCESSED; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS); UNDER WATER;

EID: 84859112252     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am201701v     Document Type: Article
Times cited : (44)

References (23)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.