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Volumn 1, Issue 9, 2013, Pages 1840-1845

All-solution-processed, transparent thin-film transistors based on metal oxides and single-walled carbon nanotubes

(9) Park, Jee Ho a Lee, Su Jeong a Lee, Tae Il a Kim, Jung Han b Kim, Chul Hong b Chae, Gee Sung b Ham, Moon Ho c Baik, Hong Koo a Myoung, Jae Min a

a Yonsei University (South Korea)

b LG Display Co Ltd (South Korea)

c Gwangju Institute of Science and Technology (GIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ORGANIC COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SUBSTRATES; THIN FILM TRANSISTORS; TIN OXIDES;

ANNEALING TEMPERATURES; FLEXIBLE DEVICE APPLICATIONS; ON/OFF CURRENT RATIO; PROCESSING TEMPERATURE; SINGLE-WALLED CARBON NANOTUBE (SWCNTS); SOURCE/DRAIN ELECTRODES; THERMAL ANNEALING TREATMENT; TRANSPARENT THIN FILM TRANSISTOR;

FABRICATION;

EID: 84876922360 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c2tc00405d Document Type: Article

Times cited : (34)

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