Measurements of the carrier dynamics and terahertz response of oriented germanium nanowires using optical-pump terahertz-probe spectroscopy

Nano Letters

Volumn 9, Issue 8, 2009, Pages 2967-2972

  Strait, Jared H ^a   George, Paul A ^a   Levendorf, Mark ^a   Martin, Blood Forsythe ^a   Rana, Farhan ^a   Park, Jiwoong ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITY; CARRIER DYNAMICS; DEPOLARIZATION FIELDS; ELECTRON-HOLE RECOMBINATION; ENERGY RELAXATION TIME; GERMANIUM NANOWIRES; INTERBAND; MOMENTUM SCATTERING; OPTICAL-PUMP TERAHERTZ-PROBE SPECTROSCOPY; PHOTOEXCITED CARRIERS; POLARIZATION DEPENDENCE; POLARIZED PERPENDICULAR; SUB-WAVELENGTH; SURFACE PLASMON FREQUENCY; TERAHERTZ RESPONSE; TERAHERTZ TRANSMISSION; ULTRA-FAST;

DENSE WAVELENGTH DIVISION MULTIPLEXING; ELECTRIC WIRE; ELECTRON ENERGY LOSS SPECTROSCOPY; GERMANIUM; LIGHT TRANSMISSION; OPTICAL PUMPING; OPTICAL WAVEGUIDES; POLARIZATION; PROBES; PUMPS;

NANOWIRES;

GERMANIUM; NANOWIRE;

ARTICLE; CHEMISTRY; OPTICAL INSTRUMENTATION; TERAHERTZ SPECTROSCOPY;

GERMANIUM; NANOWIRES; OPTICAL DEVICES; TERAHERTZ SPECTROSCOPY;

EID: 68949092058     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl901373j     Document Type: Article

References (27)

1. Tian, B.; Kempa, T. J.; Lieber, C. M. Chem. Soc. Rev. 2009, 38, 16-24.
2. Lu, W.; Lieber, C. M. IEEE Trans. Electron Devices 2008, 55, 2859-2876.
3. Surbuly, D. J.; Law, M.; Yan, H.; Yang, P. J. Phys. Chem. B 2005, 109, 15190-15213.
4. Ahn, Y. H.; Park, J. Appl. Phys. Lett. 2007, 91, 162102.
5. Law, M.; Goldberger, J.; Yang, P. Annu. Rev. Mater. Res. 2004, 34, 83-122.
6. Agarwal, R.; Lieber, C. Appl. Phys. A 2006, 85, 209-215.
7. Prasankumar, R. P.; Choi, S.; Trugman, S. A.; Picraux, S. T.; Taylor, A. J. Nano Lett. 2008, 8, 1619-1624.
8. Sun, C.-K.; Sun, S.-Z.; Lin, K.-H.; Zhang, K. Y.-J.; Liu, H.-L.; Liu, S.-C.; Wu, J.-J. Appl. Phys. Lett. 2005, 87, 023106.
9. George, P. A.; Strait, J. H.; Dawlaty, J.; Shivaraman, S.; Chandrashekhar, M.; Rana, F.; Spencer, M. G. Nano Lett. 2008, 8, 4248-4251.
10. Parkinson, P.; Lloyd-Hughes, J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Johnston, M. B.; Herz, L. M. Nano Lett. 2007, 7, 2162-2165.
11. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J.; Lieber, C. M. Appl. Phys. Lett. 2001, 78, 2214-2216.
12. Jagannathan, H.; Deal, M.; Nishi, Y.; Woodruff, J.; Chidsey, C.; McIntyre, P. C. J. Appl. Phys. 2006, 100, 024318.
13. Fan, Z.; Ho, J. C.; Jacobson, Z. A.; Yerushalmi, R.; Alley, R. L.; Razavi, H.; Javey, A. Nano Lett. 2008, 8, 20-25.
14. Katzenellenbogen, N.; Grischkowsky, D. Appl. Phys. Lett. 1991, 58, 222-224.
15. Wu, Q.; Litz, M.; Zhang, X.-C. Appl. Phys. Lett. 1996, 68, 2924-2926.
16. Lui, K. P. H.; Hegmann, F. A. Appl. Phys. Lett. 2001, 78, 3478-3480.
17. Bailey, D. W.; Stanton, C. J. J. Appl. Phys. 1994, 77, 2107-2115.
18. Tanaka, K.; Ohtake, H.; Nansei, H.; Suemoto, T. Phys. Rev. B 1995, 52, 10709-10712.
19. Urbanowicz, A.; Adomavičius, R.; Krotkus, A. Physica B 2005, 367, 152-157.
20. Gaubas, E.; Bauža, M.; Uleckas, A.; Vanhellenmont, J. Mater. Sci. Semicond. Process. 2006, 9, 781-787.
21. Léonard, F.; Talin, A. A.; Swartzentruber, B. S.; Picraux, S. T. Phys. Rev. Lett. 2009, 102, 106805.
22. Kittel, C. Introduction to Solid State Physics, 8th ed.; John Wiley & Sons: New York, 2005; p 458.
23. Pitarke, J. M.; Silkin, V. M.; Chulkov, E. V.; Echenique, P. M. Rep. Prog. Phys. 2007, 70, 1-87.
24. Nienhuys, H.-K.; Sundström, V. Appl. Phys. Lett. 2005, 87, 012101.
25. Data in Science and Technology. Semiconductors: Group IV Elements and III-V Compounds; Madelung, O., Ed.; Springer-Verlag: New York, 1991; p 35.
26. Randall, C. M.; Rawcliffe, R. D. Appl. Opt. 1967, 6, 1889-1895.
27. Muller, R. S.; Kamins, T. I. Device Electronics for Integrated Circuits, 3rd ed.; John Wiley & Sons: New York, 2003; p 232.