Surface passivated InAs/InP core/shell nanowires

Semiconductor Science and Technology

Volumn 25, Issue 2, 2010, Pages

  Van Tilburg, J W W ^a   Algra, R E ^b,c,d   Immink, W G G ^b   Verheijen, M ^b   Bakkers, E P A M ^b   Kouwenhoven, L P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c MATERIALS INNOVATION INSTITUTE M2I   (Netherlands)

^d RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ACCUMULATION LAYERS; CORE/SHELL; ELECTRON DENSITIES; FIELD-EFFECT MOBILITIES; INAS; INAS/INP; INP; IONIZED IMPURITY SCATTERING; LOW TEMPERATURES; LOW-MOBILITY; ORDER OF MAGNITUDE; SURFACE ACCUMULATION; SURFACE ROUGHNESS SCATTERING; ZERO GATE;

CARRIER CONCENTRATION; ELECTRON DENSITY MEASUREMENT; ELECTRON MOBILITY; ELECTRONS; SEMICONDUCTING INDIUM; SURFACE ROUGHNESS;

NANOWIRES;

EID: 75249087404     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/2/024011     Document Type: Article

References (34)

1. Gudiksen M S, Lauhon L J, Wang J, Smith D C and Lieber C M 2002 Growth of nanowire superlattice structures for nanoscale photonics and electronics Nature 415 617
2. Minot E D, Kelkensberg F, van Kouwen M, van Dam J A, Kouwenhoven L P, Zwiller V, Borgström M T, Wunnicke O, Verheijen M A and Bakkers E P A M 2007 Single quantum dot nanowire LEDs Appl. Phys. Lett. 7 367
3. Björk M T, Fuhrer A, Hansen A E, Larsson M W, Fröberg L E and Samuelson L 2005 Tunable effective gfactor in InAs nanowire quantum dots Phys. Rev. B 72 201307
4. Pfund A, Shorubalko I, Ensslin K and Leturcq R 2007 Suppression of spin relaxation in an InAs nanowire double quantum dot Phys. Rev. Lett. 99 036801
5. Zwanenburg F A, van Rijmenam C E W M, Fang Y, Lieber C M and Kouwenhoven C M 2009 Spin states in the first four holes in a silicon nanowire quantum dot Nanoletters 9 1071
6. Björk M T, Thelander C, Hansen A E, Jensen L E, Larsson M W, Wallenberg L Reine and Samuelson L 2004 Few-electron quantum dots in nanowires Nanoletters 4 1621
7. Lu W, Xiang J, Timko B P, Wu Y and Lieber C M 2005 One-dimensional hole gas in germanium/silicon nanowire heterostructures Proc. Natl Acad. Sci. USA 102 10046
8. Li H-Y, Wunnicke O, Borgström M T, Immink W G G, van Weert M H M, Verheijen M A and Bakkers E P A M 2007 Remote p-doping of InAs nanowires Nanoletters 7 1144
9. Jiang X, Xiong Q, Nam S, Qian F, Li Y and Lieber C M 2007 InAs/InP radial nanowire heterostructures as high mobility devices Nanoletters 7 3214
10. Bakkers E P A M, van Dam J A, de Franceschi S, Kouwenhoven L P, Kaiser M, Verheijen M, Wondergem H and van der Sluis P 2004 Epitaxial growth of InP nanowires on germanium Nature Mater. 3 769
11. Mrtensson T, Svensson C P T, Wacaser B A, Larsson M W, Seifert W, Deppert K, Gustafsson A, Wallenberg L R and Samuelson L 2004 Epitaxial III-V nanowires on silicon Nanoletters 4 1987
12. Wieder H H 1974 Transport coefficients of InAs epilayers Appl. Phys. Lett. 25 206
13. Chalmers S A, Kroemer H and Gossard A C 1991 The growth of (Al,Ga)Sb tilted superlattices and their heteroepitaxy with InAs to form corrugated-barrier quantum wells J. Cryst.Growth 111 647
14. Affentauschegg C and Wieder H H 2001 Properties of InAs/InAlAs heterostructures Semicond. Sci. Technol. 16 708
15. Doh Y-J, van Dam J A, Roest A L, Bakkers E P A M, Kouwenhoven L P and De Franceschi S 2005 Tunable supercurrent through semiconductor nanowires Science 309 272
16. Dayeh S A, Yu E T and Wang D 2009 Transport coefficients of InAs nanowires as a function of diameter Small 5 77
17. Richter T, Blömers C, Lüth H, Calarco R, Indlekofer M, Marso M and Schäpers T 2008 Flux quantization effects in InN nanowires Nanoletters 8 2834
18. Bryllert T, Wernersson L E, Fröberg L E and Samuelson L 2006 Vertical high-mobility wrap-gated InAs nanowire transistor IEEE Electron Device Lett. 27 323
19. Pfund A, Shorubalko I, Leturcq R, Borgström F, Gramm M, Müller E and Ensslin K 2006 Fabrication of semiconductor nanowires for electronic transport measurements Chimia 60 729
20. Hang Q, Wang F, Carpenter P D, Zemlyanov D, Zakharov D, Stach E A, Buhro W E and Janes D B 2008 Role of molecular surface passivation in electrical transport properties of InAs nanowires Nanoletters 8 49
21. Ford A C, Ho J C, Chueh Y L, Tseng Y C, Fan Z, Guo J, Bokor J and Javey A 2009 Diameter-dependent electron mobility of InAs nanowires Nanoletters 9 360
22. Dayeh S A, Soci C, Yu P K L, Yu E and Wang D 2007 Transport properties of InAs nanowire field effect transistors: The effects of surface states J. Vac. Sci.Technol. B 25 1432
23. Wieder H H 1978 Perspective on III-V-compound MIS structures J. Vac. Sci. Technol. 15 1498
24. Suyatin D B, Thelander C, Björk M T, Maximov I and Samuelson L 2007 Sulphur passivation for ohmic contact formation to InAs nanowires Nanotechnology 18 105307
25. Petrovykh D Y, Yang M J and Whitman L J 2003 Chemical and electronic properties of sulphur-passivated InAs surfaces Surf. Sci. 523 231
26. Wagner R S and Ellis W C 1964 Vapor-liquid-solid mechanism of single crystal growth Appl. Phys. Lett. 80 89
27. Wunnicke O 2006 Gate capacitance of back-gated nanowire field-effect transistors Appl. Phys. Lett. 89 083102
28. Matthews J W and Blakeslee A E 1974 Defects in epitaxial multilayers J. Cryst. Growth 27 118
29. Hopkinson M, David J P R, Claxton P A and Knightley P 1992 Growth of strained InAs/InP quantum wells by molecular beam epitaxy Appl. Phys. Lett. 60 841
30. Kobayashi Y and Kobayashi N 1992 In situ interface control of pseudomorphic InAs/InP quantum well structure growth by surface photo-absorption Japan. J. Appl. Phys. 31 3988
31. Arora N 2006 MOSFET Modeling for VLSI Simulation (Singapore: World Scientific)
32. Washburn H A, Sites J R and Wieder H H 1979 Electronic profile of n InAs on semi-insulating GaAs J. Appl. Phys. 50 4872
33. Dayeh S A, Aplin D P R, Zhou X, Yu P K L, Yu E T and Wang D 2007 High electron mobility InAs nanowire field-effect transistors Small 3 326
34. Hansen A E, Björk M T, Fasth C, Thelander C and Samuelson L 2005 Spin relaxation in InAs nanowires studied by tunable weak antilocalization Phys. Rev. B 71 205328