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Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

Generalized conductivity model for polar semiconductors at terahertz frequencies

(1) Lloyd Hughes, J a

a UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; CONDUCTIVITY MODELS; ENERGY DEPENDENT; FIT PARAMETERS; GAAS; INAS; MODEL SYSTEM; N-DOPED; POLAR SEMICONDUCTORS; TEMPERATURE-DEPENDENT CONDUCTIVITY; TERAHERTZ FREQUENCIES; TERAHERTZ TIME DOMAIN SPECTROSCOPY; THEORETICAL FRAMEWORK; TIME-DEPENDENT;

PHYSICAL PROPERTIES; PHYSICS;

INDIUM ARSENIDE;

EID: 84859533564 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3695161 Document Type: Article

Times cited : (27)

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