Gated-controlled rectification of a self-assembled monolayer-based transistor

Journal of Physical Chemistry C

Volumn 117, Issue 16, 2013, Pages 8468-8474

  Mentovich, Elad D ^a   Rosenberg Shraga, Natalie ^a   Kalifa, Itsik ^a   Gozin, Michael ^a   Mujica, Vladimiro ^b,c,d   Hansen, Thorsten ^e   Richter, Shachar ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b ARIZONA STATE UNIVERSITY   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

^d ARGONNE NATIONAL LABORATORY   (United States)

^e LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICALLY BONDED; COULOMB CHARGING; DRAIN ELECTRODES; MOLECULAR DEVICE; MOLECULAR TRANSISTORS; NEGATIVE DIFFERENTIAL RESISTANCES; RECTIFICATION EFFECTS; THEORETICAL MODELS;

GOLD; NANOPARTICLES; ORGANOMETALLICS; SELF ASSEMBLED MONOLAYERS;

ELECTRIC RECTIFIERS;

EID: 84876822695     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp311875g     Document Type: Article

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