Large-scale fabrication of 4-nm-channel vertical protein-based ambipolar transistors

Nano Letters

Volumn 9, Issue 4, 2009, Pages 1296-1300

  Mentovich, Elad D ^a   Belgorodsky, Bogdan ^a   Kalifa, Itsik ^a   Cohen, Hagai ^b   Richter, Shachar ^a  

^a TEL AVIV UNIVERSITY   (Israel)

^b WEIZMANN INSTITUTE OF SCIENCE   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

AMBIPOLAR BEHAVIORS; AMBIPOLAR TRANSISTORS; BOVINE SERUM ALBUMINS; CHANNEL DEVICES; CONVENTIONAL PHOTOLITHOGRAPHIES; LARGE-SCALE FABRICATIONS; LOW OPERATING VOLTAGES; MASS PRODUCTIONS; MOLECULAR TRANSISTORS; NEW DEVICES; OPERATION MECHANISMS; PROTEIN LAYERS; SELF-ASSEMBLY METHODS; SINGLE LAYERS; UNIVERSAL METHODS; VERTICAL TYPES;

CHARGE TRANSFER; ION EXCHANGE; TRANSPORT PROPERTIES;

BODY FLUIDS;

BOVINE SERUM ALBUMIN;

ARTICLE; CHEMICAL STRUCTURE; CHEMISTRY; PROTEIN CONFORMATION; X RAY CRYSTALLOGRAPHY;

CRYSTALLOGRAPHY, X-RAY; MODELS, MOLECULAR; PROTEIN CONFORMATION; SERUM ALBUMIN, BOVINE;

EID: 65249139311     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl802694k     Document Type: Article

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