![]() |
Volumn , Issue , 2011, Pages
|
Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis
|
Author keywords
[No Author keywords available]
|
Indexed keywords
CONDUCTANCE MEASUREMENT;
CONDUCTIVE FILAMENTS;
DC NOISE;
ELECTRON-TUNNELING MODEL;
FILAMENTARY CONDUCTION;
LOW-FREQUENCY NOISE;
METAL OXIDES;
NEAREST NEIGHBORS;
RANDOM ACCESS MEMORIES;
RESISTIVE SWITCHING;
SWITCHING MECHANISM;
TRANSITION TIME;
BEHAVIORAL RESEARCH;
ELECTRON DEVICES;
METALLIC COMPOUNDS;
POWER SPECTRAL DENSITY;
RANDOM ACCESS STORAGE;
SPURIOUS SIGNAL NOISE;
ELECTRON TUNNELING;
|
EID: 84863065102
PISSN: 01631918
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IEDM.2011.6131537 Document Type: Conference Paper |
Times cited : (22)
|
References (12)
|