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Volumn , Issue , 2011, Pages

Understanding the conduction and switching mechanism of metal oxide RRAM through low frequency noise and AC conductance measurement and analysis

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE MEASUREMENT; CONDUCTIVE FILAMENTS; DC NOISE; ELECTRON-TUNNELING MODEL; FILAMENTARY CONDUCTION; LOW-FREQUENCY NOISE; METAL OXIDES; NEAREST NEIGHBORS; RANDOM ACCESS MEMORIES; RESISTIVE SWITCHING; SWITCHING MECHANISM; TRANSITION TIME;

EID: 84863065102     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131537     Document Type: Conference Paper
Times cited : (22)

References (12)
  • 5
    • 67650102619 scopus 로고    scopus 로고
    • R. Waser et al., Adv. Mater., vol. 21, pp. 2632-2663 (2010).
    • (2010) Adv. Mater. , vol.21 , pp. 2632-2663
    • Waser, R.1
  • 6
    • 79952640478 scopus 로고    scopus 로고
    • S. Yu et al., Appl. Phys. Lett., vol. 98, 103514 (2011).
    • (2011) Appl. Phys. Lett. , vol.98 , pp. 103514
    • Yu, S.1
  • 8
    • 84856981036 scopus 로고    scopus 로고
    • S. Yu, et al., Appl. Phys. Lett., vol. 99, 063507 (2011).
    • (2011) Appl. Phys. Lett. , vol.99 , pp. 063507
    • Yu, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.