-
1
-
-
77957586254
-
An 18-Gb/s, direct QPSK modulation SiGe BiCMOS transceiver for last mile links in the 70-80 GHz band
-
Oct
-
I. Sarkas, S. T. Nicolson, A. Tomkins, E. Laskin, P. Chevalier, B. Sautreuil, and S. P. Voinigescu, "An 18-Gb/s, direct QPSK modulation SiGe BiCMOS transceiver for last mile links in the 70-80 GHz band," IEEE J. Solid-State Circuits, vol. 45, no. 10, pp. 1968-1980, Oct. 2010.
-
(2010)
IEEE J. Solid-State Circuits
, vol.45
, Issue.10
, pp. 1968-1980
-
-
Sarkas, I.1
Nicolson, S.T.2
Tomkins, A.3
Laskin, E.4
Chevalier, P.5
Sautreuil, B.6
Voinigescu, S.P.7
-
2
-
-
84856478456
-
A low-power BiCMOS 4-element phased array receiver for 76-84 GHz radars and communication systems
-
Feb
-
S. Y. Kim and G. M. Rebeiz, "A low-power BiCMOS 4-element phased array receiver for 76-84 GHz radars and communication systems," IEEE J. Solid-State Circuits, vol. 47, no. 2, pp. 359-367, Feb. 2012.
-
(2012)
IEEE J. Solid-State Circuits
, vol.47
, Issue.2
, pp. 359-367
-
-
Kim, S.Y.1
Rebeiz, G.M.2
-
3
-
-
84860669199
-
A fully integrated SiGe-band transceiver chipset for broadband point-to-point communication
-
San Jose, CA, USA, Jan.
-
O. Katz, R. Ben-Yishay, R. Carmon, B. Sheinman, F. Szenher, D. Papae, and D. Elad, "A fully integrated SiGe-band transceiver chipset for broadband point-to-point communication," in IEEE Silicon Monolithic Integr. Circuits in RF Syst., San Jose, CA, USA, Jan. 2012, pp. 431-434.
-
(2012)
IEEE Silicon Monolithic Integr. Circuits in RF Syst
, pp. 431-434
-
-
Katz, O.1
Ben-Yishay, R.2
Carmon, R.3
Sheinman, B.4
Szenher, F.5
Papae, D.6
Elad, D.7
-
4
-
-
77954496064
-
A 68-82 GHz integrated wideband linear receiver using 0.18 m SiGe BiCMOS
-
Anaheim, CA, USA, May
-
A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, "A 68-82 GHz integrated wideband linear receiver using 0.18 m SiGe BiCMOS," in IEEE Radio Freq. Integr. Circuits Symp., Anaheim, CA, USA, May 2010, pp. 365-368.
-
(2010)
IEEE Radio Freq. Integr. Circuits Symp
, pp. 365-368
-
-
Chen, A.Y.-K.1
Baeyens, Y.2
Chen, Y.-K.3
Lin, J.4
-
5
-
-
33745859519
-
-
FCC, Washington, DC, USA, Rep. and Order FCC-03-48, Nov.
-
"Allocations and service rules for the 71-76 GHz, 81-86 GHz and 92-95 GHz bands," FCC, Washington, DC, USA, Rep. and Order FCC-03-48, Nov. 2003.
-
(2003)
Allocations and Service Rules for the 71-76 GHz, 81-86 GHz and 92-95 GHz Bands
-
-
-
6
-
-
67249115271
-
Faster than fiber: The future of multi-Gb/s wireless
-
May
-
J. Wells, "Faster than fiber: The future of multi-Gb/s wireless," IEEE Microw. Mag., vol. 44, no. 5, pp. 104-112, May 2009.
-
(2009)
IEEE Microw. Mag.
, vol.44
, Issue.5
, pp. 104-112
-
-
Wells, J.1
-
7
-
-
79958239893
-
Next-generation access network: A wireless network using-band radio frequency (71-86 GHz) to provide wideband connectivity
-
Jun.
-
C. Colombo and M. Cirigilano, "Next-generation access network: A wireless network using-band radio frequency (71-86 GHz) to provide wideband connectivity," Bell Labs Tech. J., vol. 16, no. 1, pp. 185-205, Jun. 2011.
-
(2011)
Bell Labs Tech. J.
, vol.16
, Issue.1
, pp. 185-205
-
-
Colombo, C.1
Cirigilano, M.2
-
8
-
-
44049108385
-
A low-voltage SiGe BiCMOS 77-GHz automotive radar chipset
-
DOI 10.1109/TMTT.2008.921268, 4490423
-
S. T. Nicolson, K. Yau, S. Pruvost, V. Danelon, P. Chevalier, P. Garcia, A. Chantre, B. Sautreil, and S. Voinigescu, "A low-voltage SiGe BiCMOS 77-GHz automotive radar chipset," IEEE Trans. Microw. Theory Techn., vol. 56, no. 5, pp. 1092-1104, May 2008. (Pubitemid 351709507)
-
(2008)
IEEE Transactions on Microwave Theory and Techniques
, vol.56
, Issue.5
, pp. 1092-1104
-
-
Nicolson, S.T.1
Yau, K.H.K.2
Pruvost, S.3
Danelon, V.4
Chevalier, P.5
Garcia, P.6
Chantre, A.7
Sautreuil, B.8
Voinigescu, S.P.9
-
9
-
-
4444221554
-
A 77 GHz SiGe power amplifier for potential applications in automotive radar systems
-
Fort Worth, TX, USA, Jun.
-
U. R. Pfeiffer, S. K. Reynolds, and B. A. Floyd, "A 77 GHz SiGe power amplifier for potential applications in automotive radar systems," in IEEE Radio Freq. Integr. Circuits Symp., Fort Worth, TX, USA, Jun. 2004, pp. 91-94.
-
(2004)
IEEE Radio Freq. Integr. Circuits Symp
, pp. 91-94
-
-
Pfeiffer, U.R.1
Reynolds, S.K.2
Floyd, B.A.3
-
10
-
-
77951746229
-
Design techniques and considerations for mm-wave SiGe power amplifiers
-
N. Demirel, E. Kerherve, D. Pache, and R. Plana, "Design techniques and considerations for mm-wave SiGe power amplifiers," in IEEE Mi-crow. Opt. Conf. Dig., Nov. 2009, pp. 37-41.
-
(2009)
IEEE Mi-crow. Opt. Conf. Dig., Nov.
, pp. 37-41
-
-
Demirel, N.1
Kerherve, E.2
Pache, D.3
Plana, R.4
-
11
-
-
81455158800
-
A 15-dBm SiGe BiCMOS PA for 77-GHz automotive radar
-
Nov
-
V. Giammello, E. Ragonese, and G. Palmisano, "A 15-dBm SiGe BiCMOS PA for 77-GHz automotive radar," IEEE Trans. Microw. Theory Techn., vol. 50, no. 11, pp. 2910-2918, Nov. 2011.
-
(2011)
IEEE Trans. Microw. Theory Techn.
, vol.50
, Issue.11
, pp. 2910-2918
-
-
Giammello, V.1
Ragonese, E.2
Palmisano, G.3
-
12
-
-
84861812883
-
A transformer-coupling current-reuse SiGe HBT power amplifier for 77-GHz automotive radar
-
May
-
V. Giammello, E. Ragonese, and G. Palmisano, "A transformer-coupling current-reuse SiGe HBT power amplifier for 77-GHz automotive radar," IEEE Trans. Microw. Theory Techn., vol. 51, no. 5, pp. 2910-2918, May 2012.
-
(2012)
IEEE Trans. Microw. Theory Techn.
, vol.51
, Issue.5
, pp. 2910-2918
-
-
Giammello, V.1
Ragonese, E.2
Palmisano, G.3
-
13
-
-
33746920363
-
A wideband 77-GHz, 17.5-dBm fully integrated power amplifier in silicon
-
DOI 10.1109/JSSC.2006.877258, 1661751
-
A. Komijani and A. Hajimiri, "A wideband 77-GHz, 17.5-dBm fully integrated power amplifier in silicon," IEEE J. Solid-State Circuits, vol. 41, no. 8, pp. 1749-1756, Aug. 2006. (Pubitemid 44192100)
-
(2006)
IEEE Journal of Solid-State Circuits
, vol.41
, Issue.8
, pp. 1749-1756
-
-
Komijani, A.1
Hajimiri, A.2
-
14
-
-
77954517833
-
Transmitter chipset for 24/77-GHz automotive radar sensors
-
Anaheim, CA, USA, May
-
V. Giammello, E. Ragonese, and G. Palmisano, "Transmitter chipset for 24/77-GHz automotive radar sensors," in IEEE Radio Freq. Integr. Circuits Symp., Anaheim, CA, USA, May 2010, pp. 75-78.
-
(2010)
IEEE Radio Freq. Integr. Circuits Symp
, pp. 75-78
-
-
Giammello, V.1
Ragonese, E.2
Palmisano, G.3
-
15
-
-
77954506049
-
A high gain wideband 77 GHz SiGe power amplifier
-
Anaheim, CA, USA, May
-
R. Ben-Yishay, R. Carmon, O. Katz, and D. Elad, "A high gain wideband 77 GHz SiGe power amplifier," in IEEE Radio Freq. Integr. Circuits Symp., Anaheim, CA, USA, May 2010, pp. 529-532.
-
(2010)
IEEE Radio Freq. Integr. Circuits Symp
, pp. 529-532
-
-
Ben-Yishay, R.1
Carmon, R.2
Katz, O.3
Elad, D.4
-
16
-
-
72949098666
-
A single-chip dual-band 22-29-GHz/77-81-GHz BiCMOS transceiver for automotive radars
-
Dec
-
V. Jain, F. Tzeng, L. Zhou, and P. Heydari, "A single-chip dual-band 22-29-GHz/77-81-GHz BiCMOS transceiver for automotive radars," IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3469-3485, Dec. 2009.
-
(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.12
, pp. 3469-3485
-
-
Jain, V.1
Tzeng, F.2
Zhou, L.3
Heydari, P.4
-
17
-
-
83455171910
-
A 18 dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 m SiGe-BiCMOS
-
Atlanta, GA, USA, Oct.
-
Y. Zhao, J. R. Long, M. Spirito, and A. B. Akhnoukh, "A 18 dBm, 79-87.5 GHz bandwidth power amplifier in 0.13 m SiGe-BiCMOS," in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, Atlanta, GA, USA, Oct. 2011, pp. 17-20.
-
(2011)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 17-20
-
-
Zhao, Y.1
Long, J.R.2
Spirito, M.3
Akhnoukh, A.B.4
-
18
-
-
33746887267
-
Electrical funnel: A broadband signal combining method
-
E. Afshari, H. Bhat, X. Li, and A. Hajimiri, "Electrical funnel: A broadband signal combining method," in IEEE Int. Solid-State Circuits Conf. Tech. Dig., 2006, pp. 751-760.
-
(2006)
IEEE Int. Solid-State Circuits Conf. Tech. Dig.
, pp. 751-760
-
-
Afshari, E.1
Bhat, H.2
Li, X.3
Hajimiri, A.4
-
19
-
-
57949096230
-
A wideband high-efficiency 79-97 GHz SiGe linear power amplifier with 90 mW output
-
Monterey, CA, USA, Oct.
-
M. Chang and G. M. Rebeiz, "A wideband high-efficiency 79-97 GHz SiGe linear power amplifier with 90 mW output," in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, Monterey, CA, USA, Oct. 2008, pp. 69-72.
-
(2008)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 69-72
-
-
Chang, M.1
Rebeiz, G.M.2
-
20
-
-
70350215874
-
Current combining 60 GHz CMOS power amplifiers
-
Boston, MA, USA, Jun.
-
M. Bohsali and A. M. Niknejad, "Current combining 60 GHz CMOS power amplifiers," in IEEE Radio Freq. Integr. Circuits Symp., Boston, MA, USA, Jun. 2009, pp. 31-34.
-
(2009)
IEEE Radio Freq. Integr. Circuits Symp
, pp. 31-34
-
-
Bohsali, M.1
Niknejad, A.M.2
-
21
-
-
0036575795
-
T in a manufacturable technology
-
DOI 10.1109/55.998869, PII S0741310602041009
-
B. Jagannathan et al., "Self-aligned SiGe NPN transistors with 285 GHz and 207 GHz in a manufacturable technology," IEEE Electron Device Lett., vol. 23, no. 5, pp. 258-260, May 2002. (Pubitemid 34630850)
-
(2002)
IEEE Electron Device Letters
, vol.23
, Issue.5
, pp. 258-260
-
-
Jagannathan, B.1
Khater, M.2
Pagette, F.3
Rieh, J.-S.4
Angell, D.5
Chen, H.6
Florkey, J.7
Golan, F.8
Greenberg, D.R.9
Groves, R.10
Jeng, S.J.11
Johnson, J.12
Mengistu, E.13
Schonenberg, K.T.14
Schnabel, C.M.15
Smith, P.16
Stricker, A.17
Ahlgren, D.18
Freeman, G.19
Stein, K.20
Subbanna, S.21
more..
-
22
-
-
70249143924
-
0.13 m SiGe BiCMOS technology fully dedicated to mm-wave applications
-
Sep
-
G. Avenier et al., "0.13 m SiGe BiCMOS technology fully dedicated to mm-wave applications," IEEE J. Solid-State Circuits, vol. 44, no. 9, pp. 2312-2321, Sep. 2009.
-
(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.9
, pp. 2312-2321
-
-
Avenier, G.1
-
24
-
-
0005237332
-
Physical limitations on frequency and power parameters of transistors
-
Mar.
-
E. O. Johnson, "Physical limitations on frequency and power parameters of transistors," in IRE Int. Convention Rec., Mar. 1965, vol. 13, pp. 24-27.
-
(1965)
IRE Int. Convention Rec
, vol.13
, pp. 24-27
-
-
Johnson, E.O.1
-
25
-
-
33847073818
-
Silicon foundry technology for RF products
-
San Diego, CA, USA, Jan.
-
M. Racanelli and P. Kempf, "Silicon foundry technology for RF products," in IEEE Silicon Monolithic Integr. Circuits in RF Syst., San Diego, CA, USA, Jan. 2006, pp. 41-45.
-
(2006)
IEEE Silicon Monolithic Integr. Circuits in RF Syst
, pp. 41-45
-
-
Racanelli, M.1
Kempf, P.2
-
26
-
-
57949083771
-
Demonstration of a 270 GHz SiGe-C HBT within a manufacturing-proven 0.18 m BiCMOS process without the use of a raised extrinsic base
-
Monterey, CA, USA, Oct.
-
E. Preisler, L. Lanzerotti, P. D. Hurwitz, and M. Racanelli, "Demonstration of a 270 GHz SiGe-C HBT within a manufacturing-proven 0.18 m BiCMOS process without the use of a raised extrinsic base," in IEEE Bipolar/BiCMOS Circuits Technol. Meeting, Monterey, CA, USA, Oct. 2008, pp. 125-128.
-
(2008)
IEEE Bipolar/BiCMOS Circuits Technol. Meeting
, pp. 125-128
-
-
Preisler, E.1
Lanzerotti, L.2
Hurwitz, P.D.3
Racanelli, M.4
-
27
-
-
51849162918
-
Wideband mixed lumped-distributed-element 90 and 180 power splitters on silicon substrate for millimeter-wave applications
-
Atlanta, GA, USA, Jun.
-
A. Y.-K. Chen, H.-B. Liang, Y. Baeyens, Y.-K. Chen, Y.-S. Lin, and J. Lin, "Wideband mixed lumped-distributed-element 90 and 180 power splitters on silicon substrate for millimeter-wave applications," in IEEE Radio Freq. Integr. Circuit Symp., Atlanta, GA, USA, Jun. 2008, pp. 449-452.
-
(2008)
IEEE Radio Freq. Integr. Circuit Symp
, pp. 449-452
-
-
Chen, A.Y.-K.1
Liang, H.-B.2
Baeyens, Y.3
Chen, Y.-K.4
Lin, Y.-S.5
Lin, J.6
-
28
-
-
77950866249
-
A-band highly linear SiGe BiCMOS double-balanced active up-conversion mixer using multi-tanh technique
-
Apr
-
A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, "A-band highly linear SiGe BiCMOS double-balanced active up-conversion mixer using multi-tanh technique," IEEE Microw. Wireless Compon. Lett., vol. 20, no. 4, pp. 220-222, Apr. 2010.
-
(2010)
IEEE Microw. Wireless Compon. Lett.
, vol.20
, Issue.4
, pp. 220-222
-
-
Chen, A.Y.-K.1
Baeyens, Y.2
Chen, Y.-K.3
Lin, J.4
-
29
-
-
79957988684
-
An 80 GHz high gain double-balanced active up-conversion mixer using 0.18 m SiGe BiCMOS
-
Jun
-
A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, "An 80 GHz high gain double-balanced active up-conversion mixer using 0.18 m SiGe BiCMOS," IEEE Microw. Wireless Compon. Lett., vol. 21, no. 6, pp. 326-328, Jun. 2011.
-
(2011)
IEEE Microw. Wireless Compon. Lett.
, vol.21
, Issue.6
, pp. 326-328
-
-
Chen, A.Y.-K.1
Baeyens, Y.2
Chen, Y.-K.3
Lin, J.4
-
30
-
-
31044443422
-
Millimeter-wave design considerations for power amplifiers in an SiGe process technology
-
DOI 10.1109/TMTT.2005.860898
-
U. R. Pfeiffer and A. Valdes-Garcia, "Millimeter-wave design considerations for power amplifiers in an SiGe process technology," IEEE Trans. Microw. Theory Techn., vol. 54, no. 1, pp. 57-64, Jan. 2006. (Pubitemid 43119783)
-
(2006)
IEEE Transactions on Microwave Theory and Techniques
, vol.54
, Issue.1
, pp. 57-64
-
-
Pfeiffer, U.R.1
Valdes-Garcia, A.2
-
31
-
-
27844436074
-
Analyses and design of bias circuits tolerating output volt ages above
-
Oct
-
H. Veenstra, G. A. M. Hurkx, D. Van Goor, H. Brekelmans, and J. R. Long, "Analyses and design of bias circuits tolerating output volt ages above," IEEE J. Solid-State Circuits, vol. 40, no. 10, pp. 2008-2018, Oct. 2005.
-
(2005)
IEEE J. Solid-State Circuits
, vol.40
, Issue.10
, pp. 2008-2018
-
-
Veenstra, H.1
Hurkx, G.A.M.2
Van Goor, D.3
Brekelmans, H.4
Long, J.R.5
-
32
-
-
29044443126
-
A 21-26-GHz SiGe bipolar power amplifier MMIC
-
DOI 10.1109/JSSC.2005.857424
-
T. S. D. Cheung and J. R. Long, "A 21-26-GHz SiGe bipolar power amplifier MMIC," IEEE J. Solid-State Circuits, vol. 40, no. 12, pp. 2583-2597, Dec. 2005. (Pubitemid 41789154)
-
(2005)
IEEE Journal of Solid-State Circuits
, vol.40
, Issue.12
, pp. 2583-2597
-
-
Cheung, T.S.D.1
Long, J.R.2
-
33
-
-
77952112375
-
A high-gain 60 GHz power amplifier with 20 dBm output power in 90 nm CMOS
-
C. Y. Law and A.-V. Pham, "A high-gain 60 GHz power amplifier with 20 dBm output power in 90 nm CMOS," in IEEE Int. Solid-State Circuits Conf. Tech. Dig., 2010, pp. 426-428.
-
(2010)
IEEE Int. Solid-State Circuits Conf. Tech. Dig.
, pp. 426-428
-
-
Law, C.Y.1
Pham, A.-V.2
-
34
-
-
57349146237
-
A-band medium power amplifier in 90 nm CMOS
-
Dec
-
Y.-S. Jiang, J.-H. Tsai, and H. Wang, "A-band medium power amplifier in 90 nm CMOS," IEEE Microw. Wireless Compon. Lett., vol. 18, no. 12, pp. 818-820, Dec. 2008.
-
(2008)
IEEE Microw. Wireless Compon. Lett.
, vol.18
, Issue.12
, pp. 818-820
-
-
Jiang, Y.-S.1
Tsai, J.-H.2
Wang, H.3
-
35
-
-
34248164467
-
A 23-dBm 60-GHz distributed active transformer in a silicon process technology
-
DOI 10.1109/TMTT.2007.895654
-
U. R. Pfeiffer and D. Goren, "A 23-dBm 60-GHz distributed active transformer in a silicon process technology," IEEE Trans. Microw. Theory Techn., vol. 55, no. 5, pp. 857-865, May 2007. (Pubitemid 46725834)
-
(2007)
IEEE Transactions on Microwave Theory and Techniques
, vol.55
, Issue.5
, pp. 857-865
-
-
Pfeiffer, U.R.1
Goren, D.2
-
36
-
-
77958083545
-
Design and analysis of a 55-71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process
-
Jul
-
Y.-N. Jen, J.-H. Tsai, T.-W. Huang, and H. Wang, "Design and analysis of a 55-71-GHz compact and broadband distributed active transformer power amplifier in 90-nm CMOS process," IEEE Trans. Mi-crow. Theory Techn., vol. 57, no. 7, pp. 1637-1646, Jul. 2009.
-
(2009)
IEEE Trans. Mi-crow. Theory Techn.
, vol.57
, Issue.7
, pp. 1637-1646
-
-
Jen, Y.-N.1
Tsai, J.-H.2
Huang, T.-W.3
Wang, H.4
-
37
-
-
84862826233
-
Two-way current-combining-band power amplifier in 65-nm CMOS
-
May
-
Q. J. Gu, Z. Xu, and M.-C. F. Chang, "Two-way current-combining-band power amplifier in 65-nm CMOS," IEEE Trans. Microw. Theory Techn., vol. 60, no. 5, pp. 1365-1374, May 2012.
-
(2012)
IEEE Trans. Microw. Theory Techn.
, vol.60
, Issue.5
, pp. 1365-1374
-
-
Gu, Q.J.1
Xu, Z.2
Chang, M.-C.F.3
-
38
-
-
0036503834
-
Fully integrated CMOS power amplifier design using the distributed active-transformer architecture
-
DOI 10.1109/4.987090, PII S0018920002016852, 2001 Custuom Integrated Circuits Conference (CICC 01)
-
I. Aoki, S. D. Kee, D. B. Rutledge, and A. Hajimiri, "Fully integrated CMOS power amplifier design using the distributed active-transformer architecture," IEEE J. Solid-State Circuits, vol. 37, no. 2, pp. 371-383, Mar. 2002. (Pubitemid 34307478)
-
(2002)
IEEE Journal of Solid-State Circuits
, vol.37
, Issue.3
, pp. 371-383
-
-
Aoki, I.1
Kee, S.D.2
Rutledge, D.B.3
Hajimiri, A.4
-
39
-
-
72949088893
-
A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMAX applications
-
Dec
-
D. Chowdhury, C. D. Hull, O. B. Degani, Y. Wang, and A. M. Niknejad, "A fully integrated dual-mode highly linear 2.4 GHz CMOS power amplifier for 4G WiMAX applications," IEEE J. Solid-State Circuits, vol. 44, no. 12, pp. 3393-3402, Dec. 2009.
-
(2009)
IEEE J. Solid-State Circuits
, vol.44
, Issue.12
, pp. 3393-3402
-
-
Chowdhury, D.1
Hull, C.D.2
Degani, O.B.3
Wang, Y.4
Niknejad, A.M.5
-
40
-
-
0035692497
-
Bias circuits for GaAs HBT power amplifiers
-
E. Järvinen, S. Kalajo, and M. Matilainen, "Bias circuits for GaAs HBT power amplifiers," in IEEE MTT-S Int. Microw. Symp. Dig., Phoenix, AZ, USA, May 2001, pp. 507-510. (Pubitemid 34078784)
-
(2001)
IEEE MTT-S International Microwave Symposium Digest
, vol.3
, pp. 507-510
-
-
Jarvinen, E.1
Kalajo, S.2
Matilainen, M.3
-
41
-
-
0026865976
-
Degradation of power combining efficiency due to variability among signal sources
-
May
-
M. S. Gupta, "Degradation of power combining efficiency due to variability among signal sources," IEEE Trans. Microw. Theory Techn., vol. 40, no. 5, pp. 1031-1034, May 1992.
-
(1992)
IEEE Trans. Microw. Theory Techn.
, vol.40
, Issue.5
, pp. 1031-1034
-
-
Gupta, M.S.1
-
42
-
-
0026883144
-
A unified analysis of MMIC power amplifier stability
-
Albuquerque, NM, USA, Jun.
-
R. G. Freitage, "A unified analysis of MMIC power amplifier stability," in IEEE MTT-S Int. Microw. Symp. Dig., Albuquerque, NM, USA, Jun. 1992, pp. 297-300.
-
(1992)
IEEE MTT-S Int. Microw. Symp. Dig
, pp. 297-300
-
-
Freitage, R.G.1
-
43
-
-
52049118568
-
A broadband millimeter-wave low-noise amplifier in SiGe BiCMOS technology
-
Orlando, FL, USA, Jan.
-
A. Y.-K. Chen, H.-B. Liang, Y. Baeyens, Y.-K. Chen, and Y.-S. Lin, "A broadband millimeter-wave low-noise amplifier in SiGe BiCMOS technology," in IEEE Silicon Monolithic Integr. Circuits in RF Syst., Orlando, FL, USA, Jan. 2008, pp. 86-89.
-
(2008)
IEEE Silicon Monolithic Integr. Circuits in RF Syst
, pp. 86-89
-
-
Chen, A.Y.-K.1
Liang, H.-B.2
Baeyens, Y.3
Chen, Y.-K.4
Lin, Y.-S.5
-
44
-
-
77949381409
-
21 dB gain 87 GHz low-noise amplifier using 0.18 m SiGe BiCMOS
-
Mar.
-
A. Y.-K. Chen, Y. Baeyens, Y.-K. Chen, and J. Lin, "21 dB gain 87 GHz low-noise amplifier using 0.18 m SiGe BiCMOS," Electron. Lett., vol. 46, no. 5, pp. 332-333, Mar. 2010.
-
(2010)
Electron. Lett.
, vol.46
, Issue.5
, pp. 332-333
-
-
Chen, A.Y.-K.1
Baeyens, Y.2
Chen, Y.-K.3
Lin, J.4
|