21dB gain 87GHz low-noise amplifier using 0.18m SiGe BiCMOS

Electronics Letters

Volumn 46, Issue 5, 2010, Pages 332-333

  Chen, A Y K ^a   Baeyens, Y ^a   Chen, Y K ^a   Lin, J ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

1DB COMPRESSION POINT; 3 DB BANDWIDTH; CHIP AREAS; HIGH GAIN; INPUT AND OUTPUTS; MAXIMUM POWER GAIN; REVERSE ISOLATION; SIGE BICMOS; SIGE BICMOS TECHNOLOGY; SINGLE-ENDED; TOTAL CURRENT; TWO STAGE;

BICMOS TECHNOLOGY; LOW NOISE AMPLIFIERS; SEMICONDUCTING SILICON; SILICON ALLOYS;

AUDIO FREQUENCY AMPLIFIERS;

EID: 77949381409     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2010.0155     Document Type: Article

References (6)

1. Wells, J.: ' Faster than fibre: the future of multi-Gb/s wireless ', IEEE Microw. Mag., 2009, 10, (3), p. 104-112 1527-3342
2. Kim, J., Alvarado, J., and Kornegay, K.T.: ' A 91GHz receiver front-end in silicon-germanium technology ', IEEE Radio Frequency Integrated Circuit (RFIC) Symp., Atlanta, GA, USA, June, 2008, p. 237-240
3. May, W.M., and Rebeiz, G.M.: ' A W-band SiGe 1.5V LNA for imaging applications ', IEEE Radio Frequency Integrated Circuit (RFIC) Symp., Atlanta, GA, USA, June, 2008, p. 241-244
4. Alvarado, J., Kornegay, K.T., Welch, B.P., and Wang, Y.W.: ' W-band SiGe LNA using unilateral gain peaking ', IEEE Radio Frequency Integrated Circuit (RFIC) Symp., Atlanta, GA, USA, June, 2008, p. 289-292
5. Chen, A.Y.-K., Baeyens, Y., Chen, Y.-K., and Lin, J.: ' A low-power linear SiGe BiCMOS low-noise amplifier for millimetre-wave active imaging ', IEEE Microw. Wireless Compon. Lett., 2010, 20, (2), p. 103-105
6. Chen, A.Y.-K., Liang, H.-B., Baeyens, Y., Chen, Y.-K., Lin, J., and Lin, L.-S.: ' Wideband mixed lumped-distributed-element 90° and 180° power splitters on silicon substrate for millimetre-wave applications ', IEEE Radio Frequency Integrated Circuit (RFIC) Symp., Atlanta, GA, USA, June, 2008, p. 449-452