Design techniques and considerations for mmWave SiGe power amplifiers

SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference Proceedings

Volumn , Issue , 2009, Pages 37-41

  Demirel, Nejdat ^a   Kerhervé, Eric ^a   Pache, Denis ^b   Plana, Robert ^c  

^a UNIVERSITÉ BORDEAUX 1   (France)

^b STMICROELECTRONICS   (France)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

Design considerations; HBT SiGe; Millimeter wave applications; Power amplifier

Indexed keywords

BIAS CIRCUITS; CIRCUIT TOPOLOGY; COMMON EMITTER; COPLANAR WAVEGUIDE LINES; DESIGN CONSIDERATIONS; DESIGN METHODOLOGY; DESIGN TECHNIQUE; FULLY INTEGRATED; HBT SIGE; LARGE-SIGNALS; MATCHING NETWORKS; MAXIMUM OUTPUT POWER; MILLIMETER-WAVE APPLICATIONS; MIM CAPACITORS; MM-WAVE; PAD MODELS; PARASITIC ELEMENT; SIGE POWER AMPLIFIERS; SMALL SIGNAL;

COPLANAR WAVEGUIDES; ELECTRIC NETWORK TOPOLOGY; HETEROJUNCTION BIPOLAR TRANSISTORS; MICROWAVES; MILLIMETER WAVE DEVICES; MILLIMETER WAVES; MIM DEVICES; POWER AMPLIFIERS; SILICON ALLOYS;

DESIGN;

EID: 77951746229     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMOC.2009.5427636     Document Type: Conference Paper

References (6)

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