A wideband 77-GHz, 17.5-dBm fully integrated power amplifier in silicon

IEEE Journal of Solid-State Circuits

Volumn 41, Issue 8, 2006, Pages 1749-1756

  Komijani, Abbas ^a,b   Hajimiri, Ali ^a,b  

^a IEEE   (United States)

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

BiCMOS; Integrated circuits; Microstrip; Phased arrays; Power amplifiers; Radio transmitters; SiGe; Silicon; Silicon germanium

Indexed keywords

BICMOS; MICROSTRIP; PHASED ARRAYS; SILICON GERMANIUM;

CMOS INTEGRATED CIRCUITS; ENERGY EFFICIENCY; FABRICATION; IMPEDANCE MATCHING (ELECTRIC); POWER INTEGRATED CIRCUITS; RADIO TRANSMITTERS; SEMICONDUCTING SILICON; WAVEGUIDES;

POWER AMPLIFIERS;

EID: 33746920363     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2006.877258     Document Type: Conference Paper

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