Demonstration of a 270 GHz fT SiGe-C HBT within a manufacturing-proven 0.18μm BiCMOS process without the use of a raised extrinsic base

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2008, Pages 125-128

  Preisler, Edward ^a   Lanzerotti, Louis ^a   Hurwitz, Paul D ^a   Racanelli, Marco ^a  

^a Jazz Semiconductor   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CRYSTAL GROWTH; DOPING (ADDITIVES); SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; TRANSISTORS;

BASE DOPING; BI-CMOS; CMOS PROCESSES; DESIGN RULE CHANGES; POLY LAYERS; RAISED EXTRINSIC BASE; SIGE BICMOS; VOLUME MANUFACTURING;

SEMICONDUCTING SILICON;

EID: 57949083771     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2008.4662728     Document Type: Conference Paper

References (3)

1. P. Chevalier et al., Proc. 2005 BCTM, p. 120.
2. B. Orner et al., Proc. 2006 BCTM, p. 49.
3. M. Racanelli et al., Proc. 2001 IEDM, p. 336.