A high-gain 60GHz power amplifier with 20dBm output power in 90nm CMOS

Digest of Technical Papers - IEEE International Solid-State Circuits Conference

Volumn 53, Issue , 2010, Pages 426-427

  Law, Chi Y ^a   Pham, Anh Vu ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

90NM CMOS; AUDIO QUALITY; BREAKDOWN VOLTAGE; CMOS FABRICATION; CMOS PROCESSS; DATA RATES; FEDERAL COMMUNICATIONS COMMISSION; FREQUENCY RANGES; HIGH DEMAND; HIGH OUTPUT POWER; HIGH-GAIN; HIGH-POWER AMPLIFIERS; II-IV SEMICONDUCTORS; MAXIMUM OPERATING FREQUENCY; OUTPUT POWER; RADIATION POWER; RESEARCH INSTITUTIONS; RESEARCH TOPICS; WIRELESS COMMUNICATIONS;

CMOS INTEGRATED CIRCUITS; LAWS AND LEGISLATION; MICROPROCESSOR CHIPS; POWER AMPLIFIERS; WIRELESS TELECOMMUNICATION SYSTEMS;

HIGH FREQUENCY AMPLIFIERS;

EID: 77952112375     PISSN: 01936530     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISSCC.2010.5433882     Document Type: Conference Paper

References (9)

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