A broadband millimeter-wave low-noise amplifier in SiGe BiCMOS technology

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systms - Digest of Papers, SiRF

Volumn , Issue , 2008, Pages 86-89

  Chen, Austin ^a,b   Liang, Hsiao Bin ^c   Baeyens, Yves ^a   Chen, Young Kai ^a   Lin, Yo Sheng ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b UNIVERSITY OF FLORIDA   (United States)

^c NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

BiCMOS; Low noise amplifier (LNA) millimeter wave; Microstrip transmission lines; Silicon germanium (SiGe)

Indexed keywords

AUDIO FREQUENCY AMPLIFIERS; BICMOS TECHNOLOGY; BROADBAND AMPLIFIERS; CMOS INTEGRATED CIRCUITS; ELECTRONICS INDUSTRY; INTEGRATED CIRCUITS; LOW NOISE AMPLIFIERS; MILLIMETER WAVES; NETWORKS (CIRCUITS); NONMETALS; OPTICAL DESIGN; RADIOFREQUENCY SPECTROSCOPY; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; TECHNOLOGY; TELECOMMUNICATION SYSTEMS;

BICMOS; LOW-NOISE AMPLIFIER (LNA) MILLIMETER-WAVE; LOW-NOISE-AMPLIFIER; MATCHING NETWORKS; MICROSTRIP TRANSMISSION LINES; POWER GAINS; RF SYSTEMS; SIGE BICMOS TECHNOLOGY; SILICON-GERMANIUM (SIGE);

MONOLITHIC INTEGRATED CIRCUITS;

EID: 52049118568     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SMIC.2008.28     Document Type: Conference Paper

References (7)

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