A wideband high-efficiency 79-97 GHz SiGe linear power amplifier with > 90 mW output

Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Volumn , Issue , 2008, Pages 69-72

  Chang, Michael ^a   Rebeiz, Gabriel M ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Linear power amplifier; Millimeter wave (mmW) integrated circuits; Power amplifier (PA); Silicon germanium (SiGe) HBT; W band

Indexed keywords

BICMOS TECHNOLOGY; GERMANIUM; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEGRATED CIRCUITS; MILLIMETER WAVES; NETWORKS (CIRCUITS); POWER AMPLIFIERS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICON ALLOYS;

BIAS CIRCUITS; FULLY INTEGRATED; LINEAR DESIGNS; LINEAR POWER AMPLIFIER; MATCHING NETWORKS; MILLIMETER-WAVE (MMW) INTEGRATED CIRCUITS; ON CHIPS; QUIESCENT CURRENTS; SATURATED OUTPUT POWERS; SIGNAL CHARACTERISTICS; SILICON GERMANIUM (SIGE) HBT; SMALL SIGNALS; W-BAND; WIDE BANDS; WIDEBAND PERFORMANCES;

BROADBAND AMPLIFIERS;

EID: 57949096230     PISSN: 10889299     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/BIPOL.2008.4662714     Document Type: Conference Paper

References (7)

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