Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory

Applied Physics Letters

Volumn 89, Issue 16, 2006, Pages

  Rinke, P ^a   Scheffler, M ^a   Qteish, A ^b   Winkelnkemper, M ^b,c   Bimberg, D ^c   Neugebauer, J ^d  

^a FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^b YARMOUK UNIVERSITY   (Jordan)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d MAX PLANCK INSTITUT FÜR EISENFORSCHUNG GMBH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CARRIER CONCENTRATION; GALLIUM NITRIDE; PARAMETER ESTIMATION; PROBABILITY DENSITY FUNCTION; QUASICRYSTALS;

BAND GAP; BURNSTEIN-MOSS EFFECT; PARAMETERS; QUASIPARTICLE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33750157355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2364469     Document Type: Article

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