Dependence of InN properties on MOCVD growth parameters

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2044-2046

  Tuna, O ^a   Behmenburg, H ^b   Giesen, C ^a   Kalisch, H ^b   Jansen, R H ^b   Yablonskii, G P ^c   Heuken, M ^a,b  

^a AIXTRON AG   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

^c B I STEPANOV INSTITUTE OF PHYSICS   (Belarus)

Author keywords

Growth conditions; InN films; MOCVD

Indexed keywords

CRYSTALLINE QUALITY; DROPLET FORMATION; FIXED TEMPERATURE; GROWTH CONDITIONS; GROWTH PARAMETERS; GROWTH PRESSURE; HIGH SENSITIVITY; INN FILMS; MOCVD GROWTH; REACTOR PRESSURES; TEMPERATURE INCREMENT; V/III RATIO; X-RAY DIFFRACTION MEASUREMENTS;

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; FULL WIDTH AT HALF MAXIMUM; GROWTH TEMPERATURE; X RAY DIFFRACTION;

PRESSURE EFFECTS;

EID: 79960717280     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001004     Document Type: Article

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