2.1 mΩ-cm2, 1.6 kV 4H-silicon carbide VJFET for power applications

2005 International Semiconductor Device Research Symposium

Volumn 2005, Issue , 2005, Pages 166-167

  Veliadis, Victor ^a   Chen, Li Shu ^a   Stewart, Eric ^a   McCoy, Megan ^a   McNutt, Ty ^a   Van Campen, Steve ^a   Clarke, Chris ^a   DeSalvo, Gregory ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CASCODE CONFIGURATION; CURRENT OUTPUT; EPITAXIAL PARAMETERS; VOLTAGE BLOCKING;

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GAIN MEASUREMENT; LITHOGRAPHY; METALLIZING; PARAMETER ESTIMATION; POWER ELECTRONICS; SILICON CARBIDE;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33847178717     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. G. Miller, ISPSD 2005, Panel discussion
2. T. McNutt et al, 2005 IEEE Vehicle Power and Propulsion (VPP) Conference.