Characterization of SiC diodes in extremely high temperature ambient

Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

Volumn 2006, Issue , 2006, Pages 441-447

  Funaki, T ^a   Kashyap, A S ^b   Mantooth, H A ^b   Balda, J C ^b   Barlow, F D ^b   Kimoto, T ^a   Hikihara, T ^a  

^a KYOTO UNIVERSITY   (Japan)

^b University of Arkansas   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BODY DIODE; REVERSE CURRENT FLOW;

ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; HIGH TEMPERATURE APPLICATIONS; SILICON CARBIDE;

SCHOTTKY BARRIER DIODES;

EID: 33749506622     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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