Characterization of normally-off SiC vertical JFET devices and inverter circuits

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 1, Issue , 2005, Pages 404-409

  Lai, J S ^a   Yu, H ^b   Zhang, J ^a   Alexandrov, P ^c   Li, Y ^c   Zhao, J H ^c   Sheng, K ^c   Hefner, A ^d  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b LINEAR TECHNOLOGY CORP   (United States)

^c RUTGERS UNIVERSITY   (United States)

^d NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

Normally off JFET; SiC device; Soft switching; Synchronous rectification; VJFET

Indexed keywords

NORMALLY-OFF JFET; SIC DEVICE; SOFT SWITCHING; SYNCHRONOUS RECTIFICATION; VJFET;

ELECTRIC CONDUCTORS; ELECTRIC INVERTERS; ELECTRIC RECTIFIERS; ELECTRIC SWITCHES; SCHOTTKY BARRIER DIODES; SILICON CARBIDE; SYNCHRONOUS GENERATORS;

JUNCTION GATE FIELD EFFECT TRANSISTORS;

EID: 33745881029     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518340     Document Type: Conference Paper

References (5)

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2. H.R. Chang, E. Hanna, and A. V. Radun, "Development and Demonstration of Silicon Carbide Motor Drive Inverter Modules, in Conf. Rec. of IEEE Power Electronics Specialists Conference, Acapulco, Mexico, June 2003, pp. 211-216
3. K. Tone, J.H. Zhao, L. Fursin,. P. Alexandrov, and M. Weiner, "4H-SiC Normally-off Vertical Junction Field-Effect Transistor with High Current Density," IEEE Electron Device Letter, Vol. 24, 2003, pp. 463-465.
4. J.H. Zhao, K. Tone, X. U. P. Alexandrov, L. Fursin, and M. Weiner, "3.6mcm2, 1726V 4H-SiC Normally-off Trenched and Implanted Vertical JFETs and Circuit Applications," IEE Proc.-Circuits Devices System, Vol. 151, No. 3, June 2004, pp. 231-237
5. J.-S. Lai and N. Bassill., "Apparatus and Method for Induction Heating," U.S. Patent #6,727,482, Apr. 27, 2004.