메뉴 건너뛰기




Volumn 111, Issue 3, 2012, Pages

InGaN/GaN multiple-quantum-well light-emitting diodes grown on Si(111) substrates with ZrB2(0001) buffer layers

Author keywords

[No Author keywords available]

Indexed keywords

CRACKS; ELECTROLUMINESCENCE; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LIGHT; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EXPANSION;

EID: 84863134801     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3684557     Document Type: Article
Times cited : (27)

References (25)
  • 1
  • 15
    • 30344467838 scopus 로고    scopus 로고
    • Growth of Ga- and N- polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
    • DOI 10.1016/j.jcrysgro.2005.10.080, PII S0022024805012212
    • R. Collazo, S. Mita, A. Aleksov, R. Schlesser, and Z. Sitar, J. Cryst. Growth 287, 586 (2006). 10.1016/j.jcrysgro.2005.10.080 (Pubitemid 43069700)
    • (2006) Journal of Crystal Growth , vol.287 , Issue.2 , pp. 586-590
    • Collazo, R.1    Mita, S.2    Aleksov, A.3    Schlesser, R.4    Sitar, Z.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.