Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation

Sensors and Actuators, B: Chemical

Volumn 181, Issue , 2013, Pages 880-884

  Jang, Hyun June ^a   Gu, Ja Gyeong ^a   Cho, Won Ju ^a  

^a Kwangwoon University   (South Korea)

Author keywords

a IGZO; Dual gate; EGFET; TiO2

Indexed keywords

A-IGZO; DUAL-GATE; EGFET; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; ON/OFF CURRENT RATIO; SENSITIVITY ENHANCEMENTS; TIO;

GATE DIELECTRICS; PH SENSORS; THIN FILM TRANSISTORS; TITANIUM DIOXIDE;

FIELD EFFECT TRANSISTORS;

EID: 84875427333     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2013.02.056     Document Type: Article

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